Tailored light scattering through hyperuniform disorder in self‐organized arrays of high‐index nanodisks

PM Piechulla, B Fuhrmann, E Slivina… - Advanced Optical …, 2021 - Wiley Online Library
Arrays of nanoparticles exploited in light scattering applications commonly only feature
either a periodic or a rather random arrangement of its constituents. For the periodic case …

Diamond Etching Beyond 10 μm with Near-Zero Micromasking

ML Hicks, AC Pakpour-Tabrizi, RB Jackman - Scientific Reports, 2019 - nature.com
To exploit the exceptional properties of diamond, new high quality fabrication techniques are
needed to produce high performing devices. Etching and patterning diamond to depths …

Sapphire nanophotonics: Fabrication challenges and optical properties

YA Chen, KC Chien, IT Chen, CH Chang - Micro and Nano Engineering, 2022 - Elsevier
Sapphire has many optical applications in nanophotonics and optoelectronic devices due to
its high index, broadband transparency, and chemical and physical stability. However …

Atomic-scale etching mechanism of aluminum with fluorine-based plasma

A Asaduzzaman - The Journal of Physical Chemistry C, 2022 - ACS Publications
A first-principles density functional theory study has been carried out to investigate the
etching and corrosion of aluminum with fluorine-based plasma. Aluminum is modeled with …

In situ monitoring of sapphire nanostructure etching using optical emission spectroscopy

KC Chien, N Graff, D Djurdjanovic… - Journal of Vacuum …, 2023 - pubs.aip.org
Fabrication of nanostructures on sapphire surfaces can enable unique applications in
nanophotonics, optoelectronics, and functional transparent ceramics. However, the high …

Dry Etching of Al2O3 Thin Films in O2/BCl3/Ar Inductively Coupled Plasma

X Yang, JC Woo, DS Um, CI Kim - Transactions on Electrical and …, 2010 - koreascience.kr
In this study, the etch properties of $ Al_2O_3 $ thin films deposited by atomic layer
deposition were investigated as a function of the $ O_2 $ content in $ BCl_3 $/Ar inductively …

[HTML][HTML] Diamond etching with near-zero micromasking

X Wang, S Fang, B Wang, M Qiu, K Nishimura… - Journal of Materials …, 2024 - Elsevier
The outstanding material properties of single-crystal diamond have been the origin of the
long-standing interest in its exploitation for engineering of high-performance micro-and …

Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma

CD Frye, SB Donald, CE Reinhardt… - Materials Research …, 2021 - Taylor & Francis
The realization of vertical GaN devices requires deep plasma etching and is contingent on
high mask selectivity. In this work, we show that SiO2 can be an effective mask material for …

[PDF][PDF] 图形化蓝宝石衬底技术综述

汪明刚, 杨威风, 胡冬冬, 李超波, 夏洋 - Laser & Optoelectronics …, 2012 - researching.cn
摘要采用图形化蓝宝石衬底(PSS) 技术可以降低GaN 外延层材料位错密度,
提高了发光二极管(LED) 的内量子效率(IQE), 同时使LED 光析出率(LEE) 提高. 基于PSS …

Increasing etching depth of sapphire nanostructures using multilayer etching mask

YA Chen, IT Chen, CH Chang - … of Vacuum Science & Technology B, 2019 - pubs.aip.org
In this study, the etching of sapphire nanostructures in inductively coupled plasma reactive
ion etching using a multilayer etch mask is studied. The goals are to increase the etching …