Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the
different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures …

The role of extended and point defects, and key impurities such as C, O, and H, on the
electrical and optical properties of GaN is reviewed. Recent progress in the development of …

AlGaN/GaN heterostructure field-effect transistors HFETs have been a subject of intense
recent investigation and have emerged as attractive candidates for high voltage, high-power …

The formation of the two-dimensional electron gas (2DEG) in unintentionally doped Al x Ga
1− x N/GaN (x⩽ 0.31) heterostructures grown by rf plasma-assisted molecular-beam epitaxy …

GaN and related materials (especially AlGaN) have recently attracted a lot of interest for
applications in high power electronics capable of operation at elevated temperatures …

An overview is presented of progress in GaN electronic devices for high‐power, high‐
temperature applications. The wide bandgaps of the nitride materials, their excellent …

We report on the growth of nominally undoped GaN/Al x Ga 1− x N/GaN (x< 0.4) high
mobility heterostructures with N-face or Ga-face polarity on sapphire substrates by plasma …

Current dispersion effects have been experimentally investigated in a variety of AlGaN/GaN
heterostructure FETs with large signal and switching measurements including HEMTs with …

It is shown that the discrepancy between the measured microwave power performance of
GaN MODFETs and the prediction based on the DC characteristics is caused by the trapping …

AlGaN-GaN heterostructures with different Al concentrations (20, 27, and 35%) were grown
by metal-organic vapor phase epitaxy (MOVPE) on sapphire substrates. Ti-Al-Ti-Au ohmic …