[HTML][HTML] Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications
In this work, we propose a novel enhancement-mode GaN metal-oxide-semiconductor high
electron mobility transistor (MOS-HEMT) with a 10 nm T-gate length and a high-k TiO 2 gate …
electron mobility transistor (MOS-HEMT) with a 10 nm T-gate length and a high-k TiO 2 gate …
RF/analog and linearity performance evaluation of lattice-matched ultra-thin AlGaN/GaN gate recessed MOSHEMT with silicon substrate
In this article, the authors have demonstrated and analyzed various analog/RF, and linearity
performances of an AlGaN/GaN gate recessed MOSHEMT (GR-MOSHEMT) grown on a Si …
performances of an AlGaN/GaN gate recessed MOSHEMT (GR-MOSHEMT) grown on a Si …
Enhancing Ni/Cr/n-GaN schottky junction performance using a novel Bi2O3 insulating layer for advanced optoelectronic device applications
V Manjunath, M Vani, NV Srihari, P Josthna… - Materials Science and …, 2025 - Elsevier
Abstract Bismuth oxide (Bi 2 O 3) insulator layer was used to prepare a Ni/Cr/Bi 2 O 3/n-GaN
Metal-insulator-semiconductor (MIS)-type junction. X-ray diffraction (XRD), scanning …
Metal-insulator-semiconductor (MIS)-type junction. X-ray diffraction (XRD), scanning …
Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications
We present an analytical model for Ferro PZT Al2O3/AlGaN/AlN/GaN MOSHEMT involving
the solution of Poisson and Schrödinger equations. This analytical model covers most of the …
the solution of Poisson and Schrödinger equations. This analytical model covers most of the …
Enhancement in analog/RF and power performance of underlapped dual-gate GaN-based MOSHEMTs with quaternary InAlGaN barrier of varying widths
H Mukherjee, M Kar, A Kundu - Journal of Electronic Materials, 2022 - Springer
An underlapped dual-gate (U-DG) quaternary In 0.05 Al 0.75 Ga 0.2 N/GaN metal–oxide–
semiconductor high-electron-mobility transistor (MOS-HEMT) and a conventional ternary Al …
semiconductor high-electron-mobility transistor (MOS-HEMT) and a conventional ternary Al …
Adaptive impedance matching in microwave and terahertz metamaterial absorbers using PIN diodes and GaN HEMTs
Metamaterial absorbers allow electromagnetic waves to be converted into heat energy
based on impedance matching. However, passive metamaterial absorbers exhibit fixed …
based on impedance matching. However, passive metamaterial absorbers exhibit fixed …
Performance Analysis of Digital IC Units Based on Emode GaN HEMTs
C Ning, VL Mo, Q Chen - 2024 7th International Conference on …, 2024 - ieeexplore.ieee.org
GaN-based digital integrated circuit units are designed using only E-Mode HEMT devices.
Direct-coupled FET (DCFL) logic gates such as Inverter, AND, OR, XOR, and so on, are …
Direct-coupled FET (DCFL) logic gates such as Inverter, AND, OR, XOR, and so on, are …
GaN HEMT 电力电子器件技术研究进展
鲍婕， 周德金， 陈珍海， 宁仁霞， 吴伟东， 黄伟 - 电子与封装, 2021 - ep.org.cn
GaN HEMT 器件由于其击穿场强高, 导通电阻低等优越的性能, 在高达650 V
额定电压等级的高效, 高频转换器中有着广泛的应用前景. GaN HEMT 器件的特性优势与其工艺 …
额定电压等级的高效, 高频转换器中有着广泛的应用前景. GaN HEMT 器件的特性优势与其工艺 …
Substrate-Dependent Characteristics of AlGaN/AlN/GaN DH-HEMT: A Comprehensive Study
E Namdeo, S Singh - 2024 International Conference on …, 2024 - ieeexplore.ieee.org
This paper investigates the performance of Dual-Channel (DC) or Dual-Heterostructure (DH)
Al 0.21 Ga 0.79 N/AlN/GaN High Electron Mobility Transistors (HEMT) using three different …
Al 0.21 Ga 0.79 N/AlN/GaN High Electron Mobility Transistors (HEMT) using three different …
Numerical study of T-Gate AlGaN/AlInGaN/GaN MOSHEMT with Single and Double Barrier for THz Frequency Applications
This paper presents a comprehensive investigation into the DC analog and AC microwave
performance of a state-of-the-art T-gate double barrier AlGaN/AlInGaN/GaN MOSHEMT …
performance of a state-of-the-art T-gate double barrier AlGaN/AlInGaN/GaN MOSHEMT …