Many recent advances in microelectronics would not have been possible without the
development of strain induced nanodevices and bandgap engineering, in particular …

The last two decades of progress in the theory of crystal surfaces in and out of equilibrium is
reviewed. Various instabilities that occur during growth and sublimation, or that are caused …

Step bunching, in-phase step wandering and faceting are new morphological evolutions
from smooth vicinal surfaces. They are formed by giving changes of externally controlled …

We theoretically study step wandering and step bunching induced by the drift of adatoms
with attention to the permeability of steps. The critical drift velocity to induce the instability is …

We experimentally investigated step bunching induced by direct current on vicinal Si
(111)“1× 1” surfaces using scanning electron microscopy and atomic force microscopy. The …

We propose a unified treatment of the step bunching instability during epitaxial growth. The
scaling properties of the self-organized surface pattern are shown to depend on a single …

This work provides a ground for a quantitative interpretation of experiments on step
bunching during sublimation of crystals with a pronounced Ehrlich-Schwoebel (ES) barrier …

A data-driven approach is used to describe the growth of crystals and thin films based on
high-throughput numerical experiments. This way the Machine Learning (ML) helps to …

Bunching and meandering instability of steps at the 4H-SiC (0001) surface is studied by the
kinetic Monte Carlo simulation method. Change in the character of step instability is …

We have experimentally determined the scaling relation ym= y 0 h α between the maximum
slope ym and the height h of step bunches that were created on a Si (111) surface by direct …