The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …

Rapid digital technology advancement has resulted in a tremendous increase in computing
tasks imposing stringent energy efficiency and area efficiency requirements on next …

The shrinking of transistors has hit a wall of material degradation and the specialized
electronic applications for complex scenarios have raised challenges in heterostructures …

We demonstrate room-temperature ferroelectric field-effect transistors (Fe-FETs) with MoS2
and CuInP2S6 two-dimensional (2D) van der Waals heterostructure. The ferroelectric …

Two-dimensional materials (2DMs) have attracted tremendous research interest over the
last two decades. Their unique optical, electronic, thermal, and mechanical properties make …

The development of organic thin-film transistors (OTFTs) with low power consumption and
high gain will advance many flexible electronics. Here, by combining solution-processed …

In the continuous transistor feature size scaling down, the scaling of the supply voltage is
stagnant because of the subthreshold swing (SS) limit. A transistor with a new mechanism is …

The capacitor is a key element of electronic devices and is characterized by positive
capacitance. However, a negative capacitance (NC) behaviour may occur in certain cases …

Power dissipation is a fundamental issue for future chip-based electronics. As promising
channel materials, two-dimensional semiconductors show excellent capabilities of scaling …

Over the decades since ferroelectricity was revealed, ferroelectric materials have emerged
as a cornerstone for a wide spectrum of semiconductor technology and electronic device …