MEMS reliability: Where are we now?
DM Tanner - Microelectronics reliability, 2009 - Elsevier
This paper reviews the significant successes in MEMS products from a reliability
perspective. MEMS reliability is challenging and can be device and process dependent, but …
perspective. MEMS reliability is challenging and can be device and process dependent, but …
Silicon and silicon carbide recrystallization by laser annealing: A review
Modifying material properties within a specific spatial region is a pivotal stage in the
fabrication of microelectronic devices. Laser annealing emerges as a compelling …
fabrication of microelectronic devices. Laser annealing emerges as a compelling …
Review of laser microscale processing of silicon carbide
B Pecholt, S Gupta, P Molian - Journal of Laser Applications, 2011 - pubs.aip.org
A review of various laser techniques for microscale processing of SiC for microelectronics
and microelectromechanical-system applications is presented. SiC is an excellent material …
and microelectromechanical-system applications is presented. SiC is an excellent material …
High-pressure sensors based on laser-manufactured sintered silicon carbide
In this work Sintered Silicon Carbide (S-SiC) samples have been used to fabricate fiber-optic-
coupled pressure sensors. The sensor structure reproduces a low-finesse Fabry–Perot (FP) …
coupled pressure sensors. The sensor structure reproduces a low-finesse Fabry–Perot (FP) …
A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti3SiC2 Phase
T Abi-Tannous, M Soueidan, G Ferro… - … on Electron Devices, 2016 - ieeexplore.ieee.org
In this paper, the electrical properties of Ti 3 SiC 2-based ohmic contacts formed on p-type
4H-SiC were studied. The growth of Ti 3 SiC 2 thin films were studied onto 4H-SiC …
4H-SiC were studied. The growth of Ti 3 SiC 2 thin films were studied onto 4H-SiC …
Thermal stability study of n-type and p-type ohmic contacts simultaneously formed on 4H-SiC
Y Zhang, T Guo, X Tang, J Yang, Y He… - Journal of Alloys and …, 2018 - Elsevier
Abstract In this paper, Pt/TaSi 2/Ni/Ti/Ni/SiC and Pt/Ti/SiC simultaneous ohmic contacts to n-
type and p-type 4H-SiC are studied. The thermal stability and electrical characteristics of the …
type and p-type 4H-SiC are studied. The thermal stability and electrical characteristics of the …
A Novel Tungsten–Nickel Alloy Ohmic Contact to SiC at 900
RS Okojie, LJ Evans, D Lukco… - IEEE electron device …, 2010 - ieeexplore.ieee.org
A novel tungsten-nickel ohmic contact metallization on 4H-SiC and 6H-SiC capable of
surviving temperatures as high as 900° C is reported. Preliminary results revealed the …
surviving temperatures as high as 900° C is reported. Preliminary results revealed the …
Development of an extreme high temperature n-type ohmic contact to silicon carbide
LJ Evans, RS Okojie, D Lukco - Materials science forum, 2012 - Trans Tech Publ
We report on the initial demonstration of a tungsten-nickel (75: 25 at.%) ohmic contact to
silicon carbide (SiC) that performed for up to fifteen hours of heat treatment in argon at 1000° …
silicon carbide (SiC) that performed for up to fifteen hours of heat treatment in argon at 1000° …
Zero offset drift suppression in SiC pressure sensors at 600 C
RS Okojie, C Blaha, D Lukco, V Nguyen… - SENSORS, 2010 …, 2010 - ieeexplore.ieee.org
Temporal drifts in zero pressure offset voltage, V oz, observed in piezoresistive silicon
carbide (SiC) pressure sensors at 600° C were significantly suppressed to allow reliable …
carbide (SiC) pressure sensors at 600° C were significantly suppressed to allow reliable …
Wirelessly sensing resonant frequency of passive resonators with different Q factors
This paper presents a method of wirelessly sensing the resonant frequency of passive
resonators using modulated waveforms. A pulse signal with a relatively wide frequency …
resonators using modulated waveforms. A pulse signal with a relatively wide frequency …