Herein, SrTiO3 (STO) resistive memories with write-once-read-many-times (WORM) function
were fabricated. The STO resistive switching (RS) layers were deposited at a sputtering …

It is anticipated that the rapid development of the Internet of Things (IoT) will improve the
quality of human life. Nonetheless, large amounts of data need to be replicated, stored …

Resistive Random-Access Memory (RRAM) presents a transformative technology for diverse
computing and artificial intelligence applications. However, variability in the high resistance …

Hafnium oxide (HfO x) memristor has attracted enormous attention due to its high
performance and back-end-of-line (BEOL) compatibility, thus providing a novel approach to …

Brain‐inspired neuromorphic computing has attracted widespread attention owing to its
ability to perform parallel and energy‐efficient computation. However, the synaptic weight of …

Polycrystalline SnO2-HfO2 nanolaminated thin films were grown by atomic layer deposition
(ALD) on SiO2/Si (100) and TiN substrates at 300° C. The samples, when evaluated …

As the capabilities of consumer electronics grow, so too does the need for low-energy, low-
cost, and process-compatible embedded non-volatile memory (NVM). Resistive RAM …

In this work, a novel interface engineering method is proposed to address the relatively large
cycle-to-cycle variability of the emerging metal-oxide resistive random access memory …