Numerical modelling for the diameter increase of silicon crystals grown with the pedestal method
K Surovovs, A Kravtsov, J Virbulis - Journal of Crystal Growth, 2021 - Elsevier
The pedestal method is one of crucible-free crystal growth methods, that has been less
researched than the well-known floating zone (FZ) method. However, the pedestal method …
researched than the well-known floating zone (FZ) method. However, the pedestal method …
OPTIMIZATION OF THE SHAPE OF HIGH-FREQUENCY INDUCTOR FOR THE PEDESTAL GROWTH OF SILICON CRYSTALS.
K Surovovs, A Kravtsov… - Magnetohydrodynamics …, 2019 - search.ebscohost.com
The present paper is focused on mathematical modelling and experimental development of
the pedestal growth of silicon crystals. In the considered crystal growth method, the melt is …
the pedestal growth of silicon crystals. In the considered crystal growth method, the melt is …
Formation and preferred growth behavior of grooved seed silicon substrate for kerfless technology
JY Yan, YW Wang, YM Guo, W Zhang, C Wang… - Chinese …, 2019 - iopscience.iop.org
Kerfless technology is a promising alternative for reducing cost and providing flexible thin
crystals in silicon-based semiconductors. In this work we propose a protruded seed …
crystals in silicon-based semiconductors. In this work we propose a protruded seed …
Modelling of the pedestal growth of silicon crystals
K Surovovs, A Kravtsov, J Virbulis - Lithuanian Journal of Physics, 2021 - lmaleidykla.lt
The pedestal method is an alternative to the well-known floating zone method, both of which
are performed with high-frequency electromagnetic heating. Unlike the floating zone …
are performed with high-frequency electromagnetic heating. Unlike the floating zone …