Semiconductor field effect devices (FEDs) have become ubiquitous in everyday life due to
their widespread applications. However, their stability in challenging environments such as …

The vacuum channel transistor has emerged as a promising candidate for next-generation
technology due to its intriguing features compared to the conventional field effect transistor …

Nanoscale vacuum channel transistors based on field emission have gained attention
recently, and device demonstrations using various material systems have been reported …

Nanoscale vacuum (airgap) channels have garnered attention as conduits for ballistic
electron transport even under ambient atmospheric conditions. To date only single nanogap …

A planar lateral vacuum field emission triode (VFET) with a nanoscale channel of 80–90 nm
was fabricated on a silicon wafer. The nanoscale channel of this vacuum triode was …

A nanoscale field emission vacuum channel gated diode structure is proposed and a
tungsten cathode with an umbrella-like geometry and sharp vertical edge is fabricated. The …

The newly developed nanoscale vacuum devices have basic functions similar to traditional
vacuum tubes, but can be manufactured by existing silicon-based process lines to achieve …

Vacuum channel transistors are potential candidates for low-loss and high-speed electronic
devices beyond complementary metal-oxide-semiconductors (CMOS). When the nanoscale …

In this study, metal-based asymmetric electrodes for field emission (FE) diodes were
fabricated. E-beam lithography generated a minimal anode–cathode distance of …

A planar lateral Vacuum Field Emission Triode (VFET) with a double gate structure is
proposed to improve the gate modulation characteristics in this letter. The preparation of this …