There has been a surge of interest in Non-Volatile Memory (NVM) in recent years. With
many advantages, such as density and power consumption, NVM is carving out a place in …

The emerging spin-transfer torque magnetic random-access memory (STT-RAM) has
attracted a lot of interest from both academia and industry in recent years. It has been …

Spin-Transfer Torque Random Access Memory (STT-RAM) has been identified as an
advantageous candidate for on-chip memory technology due to its high density and ultra low …

Local moment molecular systems have now been used as the conduction channel in gated
spintronics devices, and some of these three terminal devices might even be considered …

For the sake of higher cell density while achieving near-zero standby power, recent research
progress in Magnetic Tunneling Junction (MTJ) devices has leveraged Multi-Level Cell …

Spin-transfer torque magnetic random access memory (STT-RAM) is a promising and
emerging technology due to its many advantageous features such as scalability …

Reliability continues to be a severe challenge in the development of emerging memories. In
this article, the authors offer a comprehensive survey of reliability enhancement techniques …

As technology process node scales down, on-chip SRAM caches lose their efficiency
because of their low scalability, high leakage power, and increasing rate of soft errors …

Downscaling of semiconductor technology has led DRAM-based main memories to lag
behind emerging non-volatile memories, eg, Spin-Transfer Torque Magnetic Random …

Recent development in memory technologies has introduced Spin-Transfer Torque
Magnetic RAM (STT-MRAM) as the most promising replacement for SRAMs in on-chip …