Focused Ga+ ion milling of lightly Si-doped, n-type Ga 2 O 3 was performed with 2–30 kV
ions at normal incidence and beam currents that were a function of beam voltage, 65 nA for …

For all technologies, the energy-payback time (EPBT) serves as a critical metric. As an
example, we study ion beam sputter deposition (IBSD), a sputter deposition approach where …

Deposition of epitaxial oxide semiconductor films using physical vapor deposition methods
requires a detailed understanding of the role of energetic particles to control and optimize …

In recent years, α-Ga 2 O 3 and α-Ga 2 O 3-based photodetectors have garnered significant
attention due to their unique advantages in deep-ultraviolet photodetection. However, the …

Vertical Schottky barrier diodes based on an ion beam sputter (IBS)-deposited β-Ga2O3 film
on a single-crystalline (2¯ 01) unintentionally doped (UID) β-Ga2O3 with a Ni contact were …

Gallium oxide thin films were grown by ion beam sputter deposition (IBSD) at room
temperature on Si substrates with systematically varied process parameters: primary ion …

The energy and beam current dependence of Ga+ focused ion beam milling damage on the
sidewall of vertical rectifiers fabricated on n-type Ga 2 O 3 was investigated with 5–30 kV …

Focused Ga+ ion milling of lightly Si-doped, n-type Ga2O3 was performed with 2–30 kV ions
at normal incidence and beam currents that were a function of beam voltage. The electrical …