Diffusion-Dominated Luminescence Dynamics of CsPbBr3 Studied Using Cathodoluminescence and Microphotoluminescence Spectroscopy

S Nekita, S Yanagimoto, T Sannomiya, K Akiba… - Nano Letters, 2024 - ACS Publications
Time-resolved or time-correlation measurements using cathodoluminescence (CL) reveal
the electronic and optical properties of semiconductors, such as their carrier lifetimes, at the …

Numerical simulation of homojunction pin In0. 4Ga0. 6N solar cell with different absorber layer configurations

AK Tan, HU Manzoor, NA Hamzah, MA Ahmad, SS Ng… - Optik, 2022 - Elsevier
The effects of thickness, carrier densities, and absorber layer (p-In 0.4 Ga 0.6 N)
configurations were evaluated. Numerical studies were performed to optimize the …

Exploration on electronic properties of self-assembled Indium nitrogen nanosheets and nanowires by a density functional method

R Zhao, R Chen, H Zhao, F Lin, JG Han - Molecules, 2023 - mdpi.com
Equilibrium geometries and properties of self-assembled (InN) 12n (n= 1–9) nanoclusters
(nanowires and nanosheets) are studied using the GGA-PBE (general gradient …

Geometrical and electronic properties of the plane-like selfassembled structured (In12N12) n (n= 1–9) nanomaterials based on In12N12 cages connecting with four …

RN Zhao, R Chen, JG Han - Microporous and Mesoporous Materials, 2021 - Elsevier
Geometries, growth patterns, and electronic properties of (InN) 12n nanoclusters are
investigated at the GGA-PBE level with LanL2DZ basis set for In atoms and 6-31G (d) basis …

Luminescence of structured InN deposited on graphene interlayer

D Dobrovolskas, A Kadys, A Usikov… - Journal of …, 2021 - Elsevier
Indium nitride epilayers were grown by metalorganic chemical vapour deposition (MOCVD)
on graphene/SiC substrates with different terrace widths. Photoluminescence (PL) …

Influence of proton irradiation on carrier mobility in InN epitaxial layers

A Mekys, J Jurkevičius, A Kadys, M Kolenda… - Thin Solid Films, 2019 - Elsevier
Influence of proton irradiation on carrier mobility in InN epilayers with different densities of
equilibrium carriers is studied by performing Hall measurements in the temperature range …

Exploration Mechanism of Self-Assembled Indium Nitrogen Nanosheets and Nanowires for Optoelectronic Applications by a Density Functional Investigation

RN Zhao, R Chen, H Zhao, JG Han - Available at SSRN 4403086 - papers.ssrn.com
Equilibrium geometries and properties of self-assembled (InN) 12n (n= 1-9) nanoclusters
are studied using the GGA-PBE method. The relative stabilities and growth patterns of (InN) …