The effects of thickness, carrier densities, and absorber layer (p-In 0.4 Ga 0.6 N) configurations were evaluated. Numerical studies were performed to optimize the …
R Zhao, R Chen, H Zhao, F Lin, JG Han - Molecules, 2023 - mdpi.com
Equilibrium geometries and properties of self-assembled (InN) 12n (n= 1–9) nanoclusters (nanowires and nanosheets) are studied using the GGA-PBE (general gradient …
RN Zhao, R Chen, JG Han - Microporous and Mesoporous Materials, 2021 - Elsevier
Geometries, growth patterns, and electronic properties of (InN) 12n nanoclusters are investigated at the GGA-PBE level with LanL2DZ basis set for In atoms and 6-31G (d) basis …
D Dobrovolskas, A Kadys, A Usikov… - Journal of …, 2021 - Elsevier
Indium nitride epilayers were grown by metalorganic chemical vapour deposition (MOCVD) on graphene/SiC substrates with different terrace widths. Photoluminescence (PL) …
Influence of proton irradiation on carrier mobility in InN epilayers with different densities of equilibrium carriers is studied by performing Hall measurements in the temperature range …
RN Zhao, R Chen, H Zhao, JG Han - Available at SSRN 4403086 - papers.ssrn.com
Equilibrium geometries and properties of self-assembled (InN) 12n (n= 1-9) nanoclusters are studied using the GGA-PBE method. The relative stabilities and growth patterns of (InN) …