Aggressive gate-length downscaling of the metal-oxide-semiconductor field-effect transistor
(MOSFET) has been the main stimulus for the growth of the integrated circuit industry. This …

We have demonstrated high-performance InAlN/GaN MOS high-electron-mobility-transistors
(MOSHEMTs) with various channel lengths () of 85–250 nm using atomic-layer-epitaxy …

In this paper, we report the observation of random telegraph noise (RTN) in highly scaled
InGaAs gate-all-around (GAA) MOSFETs fabricated by a top-down approach. RTN and low …

In this paper, we propose new guidelines for the analysis of random telegraph noise (RTN)
in electronic devices. Starting from an in-depth understanding of RTN signal characteristics …

A novel method of analyzing the dynamic read variation (equivalent gate bias deviation [()]
over a wide gate-voltage range of devices is proposed and applied to CMOS-compatible …

In this work, a random telegraph noise (RTN) analysis has been carried out, to the best of
our knowledge, for the first time to characterize the defects activated by forward-biased gate …

In this paper, we report the experimental extraction of ballistic transport parameters of
highperformance Germanium Nanowire nMOSFETs (Ge NWTs) with lengths L NW= 40-100 …

InGaAs is a promising channel material for high performance CMOS logic circuits due to its
large electron injection velocity. InGaAs Gate-All-Around (GAA) MOSFETs have been …

This chapter is arranged as a bottom-up journey through the most important noise type in
emerging resistive random access memory (RRAM) devices: random telegraph noise (RTN) …

In this paper, we have developed a straightforward MOS admittance-based technique for
defect density extraction, utilizing analytical equations for MOS capacitors with border traps …