[HTML][HTML] Quantum dot optoelectronic devices: lasers, photodetectors and solar cells
Nanometre-scale semiconductor devices have been envisioned as next-generation
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …
Structural properties of self-organized semiconductor nanostructures
J Stangl, V Holý, G Bauer - Reviews of modern physics, 2004 - APS
Instabilities in semiconductor heterostructure growth can be exploited for the self-organized
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …
[图书][B] Heteroepitaxy of semiconductors: theory, growth, and characterization
In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …
explosive growth of the electronics industry and the development of a myriad of …
III-nitride semiconductors for intersubband optoelectronics: a review
III-nitride nanostructures have recently emerged as promising materials for new
intersubband (ISB) devices in a wide variety of applications. These ISB technologies rely on …
intersubband (ISB) devices in a wide variety of applications. These ISB technologies rely on …
Quantum dots-in-a-well infrared photodetectors
S Krishna - Journal of Physics D: Applied Physics, 2005 - iopscience.iop.org
Abstract Novel InAs/InGaAs quantum dots-in-a-well (DWELL) infrared photodetectors are
reviewed. These detectors, in which the active region consists of InAs quantum dots (QDs) …
reviewed. These detectors, in which the active region consists of InAs quantum dots (QDs) …
Quantum dot opto-electronic devices
P Bhattacharya, S Ghosh… - Annu. Rev. Mater …, 2004 - annualreviews.org
▪ Abstract Highly strained semiconductors grow epitaxially on mismatched substrates in the
Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of …
Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of …
Nanostructured materials and architectures for advanced infrared photodetection
Infrared photodetectors are finding widespread applications in telecommunication, motion
detection, chemical sensing, thermal imaging and bio‐medical imaging, etc. The …
detection, chemical sensing, thermal imaging and bio‐medical imaging, etc. The …
High detectivity InAs quantum dot infrared photodetectors
We report a high detectivity of 31011 cm Hz1/2/W at 78 K for normal-incidence quantum dot
infrared photodetectors with ten layers of undoped InAs/InGaAs/GaAs quantum dot active …
infrared photodetectors with ten layers of undoped InAs/InGaAs/GaAs quantum dot active …
Review of current progress in quantum dot infrared photodetectors
Quantum dot infrared photodetectors (QDIPs) have made significant progress after their
early demonstration about a decade ago. We review the progress made by QDIP technology …
early demonstration about a decade ago. We review the progress made by QDIP technology …
Review of experimental results related to the operation of intermediate band solar cells
The intermediate band solar cell (IBSC) has drawn the attention of the scientific community
as a means to achieve high-efficiency solar cells. Complete IBSC devices have been …
as a means to achieve high-efficiency solar cells. Complete IBSC devices have been …