This paper reviews the recent activities for normally-off GaN-based gate injection transistors
(GITs) on Si substrates and their application to inverters. Epitaxial growth of the AlGaN/GaN …

We review recent progress in the group-III nitride and related materials, and electronic and
optical devices based on them. Blue and UV (eg ultra violet) emitters and detectors, and …

The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …

Abstract Photoluminescence (PL), Raman spectroscopy, and x-ray diffraction are employed
to demonstrate the co-existence of a biaxial and a hydrostatic strain that can be present in …

Recent development of technology and understanding of the growth mechanism in
heteroepitaxial growth of nitrides on highly-mismatched substrates have enabled us to grow …

The" blue laser" is an exciting new device used in physics. The potential is now being
recognized for its development into a commercial lighting system using about a tenth of the …

Lattice parameters of gallium nitride were measured using high-resolution x-ray diffraction.
The following samples were examined:(i) single crystals grown at pressure of about 15 …

The structural, dielectric, lattice-dynamical, and electronic properties of biaxially and
uniaxially strained group-III nitrides are studied ab initio using a pseudopotential-plane …

Abstract (Al, Ga) N/GaN quantum wells have been studied by temperature-dependent
luminescence and reflectivity. The samples were grown by molecular beam epitaxy on …

Al x Ga 1− x N alloys were grown on c-plane sapphire by plasma-induced molecular beam
epitaxy. The Al content x was varied over the whole composition range (0⩽ x⩽ 1). The molar …