Complementary metal‐oxide‐semiconductor (CMOS) field‐effect transistors (FETs) are the
key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron …

The continued downscaling of silicon CMOS technology presents challenges for achieving
the required low power consumption. While high mobility channel materials hold promise for …

Alkali-assisted chemical vapour deposition (CVD) of transition metal dichalcogenides
(TMDs) has been shown to promote the growth of large single crystals of TMD monolayers …

GeSn has emerged as a promising semiconductor with optoelectronic functionality in the
mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip …

Recent years have witnessed increasing efforts devoted to the growth, assembly and
integration of quasi-one dimensional (1D) nanowires (NWs), as fundamental building blocks …

As transistors continue to shrink, the need to replace silicon with materials of higher carrier
mobilities becomes imperative. Group‐IV semiconductors, and particularly GeSn alloys …

Inconsistent interface control in devices based on two-dimensional materials (2DMs) has
limited technological maturation. Astounding variability of 2D/three-dimensional (2D/3D) …

Germanium channel FinFET transistors process integration on a silicon substrate is a
promising candidate to extend the complementary metal–oxide–semiconductor …

Metal oxide semiconductor (MOS)-based chemiresistors have been widely used for
detecting harmful gases in many industrial and indoor/outdoor applications, which possess …

The continued downscaling of silicon CMOS technology presents challenges for achieving
the required low power consumption. While high mobility channel materials hold promise for …