Memristive-synapse spiking neural networks based on single-electron transistors

K Long, X Zhang - Journal of Computational Electronics, 2020 - Springer
In recent decades, with the rapid development of artificial intelligence technologies and
bionic engineering, the spiking neural network (SNN), inspired by biological neural systems …

Transient modelling of single-electron transistors for efficient circuit simulation by SPICE

YS Yu, SW Hwang, D Ahn - IEE Proceedings-Circuits, Devices and Systems, 2005 - IET
In the paper, a regime, where the independent treatment of single-electron transistors
(SETs) in transient simulations is valid, has been identified quantitatively. It is found that, as …

Design and analysis of SET circuits: Using MATLAB modules and SIMON

M Sulieman, V Beiu - 4th IEEE Conference on Nanotechnology …, 2004 - ieeexplore.ieee.org
This paper describes two MATLAB modules which have been developed for enhancing
SIMON, a Monte Carlo simulator for single electron technology (SET) circuits. The first …

Comparative study on energy-efficiencies of single-electron transistor-based binary full adders including nonideal effects

J Lee, JH Lee, IY Chung, CJ Kim… - IEEE transactions on …, 2011 - ieeexplore.ieee.org
Performances and energy efficiencies of various single-electron transistor-based (SET-
based) binary full adders (FAs) are comparatively investigated with optimization of device …

Analysis and simulation of single electron transistor as an analogue frequency doubler

A Eskandarian, Z Rajeyan, H Ebrahimnezhad - Microelectronics journal, 2018 - Elsevier
Abstract Performance of Single Electron Transistors as analogue frequency doublers is
evaluated by analysis and HSPICE simulations. First, a macro model is selected which …

Numerical study of very small floating islands

H Watanabe, K Yao, J Lin - IEEE Transactions on Electron …, 2014 - ieeexplore.ieee.org
The electrical property of very small floating island whose diameter is less than the de
Broglie length is numerically investigated without fitting parameters. In general, it is difficult …

Multi-valued static random access memory (SRAM) cell with single-electron and MOSFET hybrid circuit

YS Yu, HW Kye, BN Song, SJ Kim, JB Choi - Electronics letters, 2005 - IET
A new multi-valued static random access memory (MVSRAM) cell with a hybrid circuit
consisting of a single-electron (SE) and MOSFETs is proposed. The previously reported …

3 Single-Electron Transistor and its Logic Application

Y Ono, H Inokawa, Y Takahashi… - Nanotechnology …, 2008 - books.google.com
Complementary metal-oxide-semiconductor (CMOS) technology will face significant
technological limitations shortly after 2010 [1], and intensive studies are currently being …

[PDF][PDF] Simulation and analysis of radio-frequency single-electron transistor (RF-SET) by SPICE

YS Yu, SH Son, SW Hwang, NK Park, H Park… - JOURNAL-KOREAN …, 2005 - Citeseer
The single-electron transistor (SET)[1, 2] is one of the promising candidates for a highly
sensitive electrometer in measuring quantum states of quantum computations and …

[图书][B] Design and analysis of single-electron technology neural-inspired gates and arithmetic circuits

MH Sulieman - 2004 - search.proquest.com
Abstract Single-Electron-Technology (SET) is one of the promising nanotechnologies,
distinguished by a very small device size and ultra-low power dissipation. This dissertation …