Large linewidth reduction in semiconductor lasers based on atom-like gain material
With a new generation of quantum dot (QD) optical gain material comprising atom-like
features, the fundamental spectral characteristics of laser emission have been improved …
features, the fundamental spectral characteristics of laser emission have been improved …
High-power, high-spectral-purity GaSb-based laterally coupled distributed feedback lasers with metal gratings emitting at 2 μm
CA Yang, SW Xie, Y Zhang, JM Shang… - Applied Physics …, 2019 - pubs.aip.org
We report on the fabrication of high-power, high-spectral-purity GaSb-based laterally
coupled distributed feedback (LC-DFB) lasers emitting at 2 μm. Second-order Chromium …
coupled distributed feedback (LC-DFB) lasers emitting at 2 μm. Second-order Chromium …
Partly gain-coupled 1.55 mu m strained-layer multiquantum-well DFB lasers
GP Li, T Makino, R Moore, N Puetz… - IEEE journal of …, 1993 - ieeexplore.ieee.org
1.55-mu m gain-coupled InGaAsP-InP distributed feedback (DFB) lasers which use a
strained-layer multi-quantum-well (MQW) active grating for a mixed index and gain coupling …
strained-layer multi-quantum-well (MQW) active grating for a mixed index and gain coupling …
Threshold condition of DFB semiconductor lasers by the local-normal-mode transfer-matrix method: correspondence to the coupled-wave method
T Makino - Journal of lightwave technology, 1994 - ieeexplore.ieee.org
An analytical expression for the threshold condition of DFB semiconductor lasers is derived
based on the local-normal-mode transfer-matrix method (TMM). The threshold condition is …
based on the local-normal-mode transfer-matrix method (TMM). The threshold condition is …
Basic analysis of AR-coated, partly gain-coupled DFB lasers: The standing wave effect
A theoretical analysis of distributed feedback (DFB) lasers with mixed gain and index
coupling (partly gain-coupled DFB) is given for perfect antireflection (AR) coatings …
coupling (partly gain-coupled DFB) is given for perfect antireflection (AR) coatings …
1.55 μm index/gain coupled DFB lasers with strained layer multiquantum-well active graing
GP Li, T Makino, R Moore, N Puetz - Electronics Letters, 1992 - IET
1.55 μm index/gain coupled DFB lasers with strained layer multiquantum-well active graing Page
1 WANG, Z.-G., BERROTH, M., NOWOTNY, U., GOZE1NA, W., HOFMANN, P., HULSMANN …
1 WANG, Z.-G., BERROTH, M., NOWOTNY, U., GOZE1NA, W., HOFMANN, P., HULSMANN …
Gain-coupled distributed feedback semiconductor lasers with an absorptive conduction-type inverted grating
Y Luo, HL Cao, M Dobashi… - IEEE photonics …, 1992 - ieeexplore.ieee.org
A gain-coupled (GC) distributed feedback (DFB) semiconductor laser with an absorptive
conduction-type-inverted grating is proposed. Devices based on GaAlAs/GaAs materials are …
conduction-type-inverted grating is proposed. Devices based on GaAlAs/GaAs materials are …
On the distinctive features of gain coupled DFB lasers and DFB lasers with second-order grating
The two types of distributed-feedback (DFB) lasers with gain coupling, ie, true gain coupled
lasers (with either a gain or loss grating) and second-order index coupled lasers, are shown …
lasers (with either a gain or loss grating) and second-order index coupled lasers, are shown …
Fabrication and characteristics of improved strained quantum-well GaInAlAs gain-coupled DFB lasers
B Borchert, B Stegmüller, R Gessner - Electronics Letters, 1993 - IET
Results of improved 1.58 μm GaInAlAs strained quantum-well gain-coupled DFB lasers are
presented. Besides the excellent spectral properties (singlemode yield of 75% and a …
presented. Besides the excellent spectral properties (singlemode yield of 75% and a …
High-power and high-speed performance of 1.3-/spl mu/m strained MQW gain-coupled DFB lasers
H Lu, C Blaauw, B Benyon, GP Li… - IEEE Journal of …, 1995 - ieeexplore.ieee.org
In-phase gain-coupled distributed feedback (DFB) lasers with etched quantum-well active-
layers emitting at 1.3-/spl mu/m wavelength have been fabricated for the first time. High …
layers emitting at 1.3-/spl mu/m wavelength have been fabricated for the first time. High …