The continuous scaling needed for better performance and higher density has introduced
some new challenges to the back end of line (BEOL) in terms of layout and design …

We have performed time-domain reflectometry (TDR) measurements on nMOSFETs before
and after irradiation on time scales relevant to MOS radio-frequency response. The …

The data transmission rate, range, and reliability of free-space optical communication (FSO)
systems are affected by a number of atmospheric phenomena, such as rain, haze, fog, snow …

The total-dose radiation tolerance of 32-nm nFETs is investigated. nFETs built in 32-nm RF-
CMOS-on-SOI technology with high-k dielectrics show increased off-state leakage current …

The hot carrier and ionizing radiation responses of 45-nm SOI RF nMOSFETs are
investigated. Devices with “tight” source/drain (S/D) contact spacing have improved RF …

The parasitic capacitance and resistance originated from interconnect metals of MOSFETs
degrade the high-frequency performance, including gain and bandwidth. The degradation is …

We investigate the operating voltage constraints and hot carrier reliability (HCR) of 45-nm
SOI RF nMOSFETs and cascode cores built from these devices. The devices were …

Nowadays over 50% of the integrated circuits are manufactured at wafer foundries. This
book presents a foundry-integrated perspective of the field and is a comprehensive and up …

This chapter discusses the typical set of BEOL DR, as used in the wafer foundry. Devices
scaling, which has driven the CMOS technology for the last 50 years, increases not only …

The increased use of foundry technology by fabless companies demands a careful definition
of the platform reliability targets. In addition, the knowledge accumulated in the foundry …