Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity cap

A Babiński, J Jasiński, R Bożek, A Szepielow… - Applied Physics …, 2001 - pubs.aip.org
The effect of postgrowth rapid thermal annealing (RTA) on GaAs proximity-capped structures
with self-assembled InAs/GaAs quantum dots (QDs) is investigated using transmission …

Evaluation of different capping strategies in the InAs/GaAs QD system: Composition, size and QD density features

D González, S Flores, N Ruiz-Marín, DF Reyes… - Applied Surface …, 2021 - Elsevier
In this work, two different strategies to preserve InAs/GaAs QDs against decomposition
during the capping process have been compared structurally and optically. They are based …

Influence of In/Ga intermixing on the optical properties of InGaAs/GaAs quantum dots

F Heinrichsdorff, M Grundmann, O Stier, A Krost… - Journal of crystal …, 1998 - Elsevier
We report on the impact of thermal annealing of buried InGaAs quantum dots (QDs) on the
eigenstate energies and their inhomogeneous broadening due to size fluctuations …

Electronics states of interdiffused quantum dots

O Gunawan, HS Djie, BS Ooi - Physical Review B—Condensed Matter and …, 2005 - APS
We have developed a three-dimensional model for electronic states calculation of
interdiffused quantum dots (QDs) with arbitrary shape by solving the BenDaniel-Duke's …

Intermixing induced changes in the radiative emission from III–V quantum dots

C Lobo, R Leon, S Fafard, PG Piva - Applied physics letters, 1998 - pubs.aip.org
We have examined the effect of thermally induced interdiffusion on the luminescence
emission from red and infrared emitting self-assembled III–V quantum dots. Three different …

Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

Z Yang, S Zhang, S Ma, Y Shi, Q Liu, X Hao, L Shang… - Materials, 2023 - mdpi.com
Quantum-well intermixing (QWI) technology is commonly considered as an effective
methodology to tune the post-growth bandgap energy of semiconductor composites for …

Interdiffusion of Al and Ga in AlN/AlGaN superlattices grown by ammonia-assisted molecular beam epitaxy

M Nemoz, F Semond, S Rennesson, M Leroux… - Superlattices and …, 2021 - Elsevier
Abstract Diffusion at the AlN/Al 0.3 Ga 0.7 N interface was investigated by X-ray diffraction,
high-angle annular dark field scanning transmission electron microscopy and energy …

Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots

B Lita, RS Goldman, JD Phillips… - Applied physics …, 1999 - pubs.aip.org
We have investigated the vertical organization and evolution of 1-, 5-, 10-, and 20-layer
stacks of molecular beam epitaxially grown self-assembled InAs/GaAs quantum dots using …

InAs/GaAs quantum dot intermixing induced by proton implantation

Y Ji, W Lu, G Chen, X Chen, Q Wang - Journal of applied physics, 2003 - pubs.aip.org
Because of increasing interest in their fundamental physics and novel device applications,
great effort has been devoted to the fabrication and exploitation of self-assembled In (Ga) As …

Anneal-induced interdiffusion in 1.3-μmgainnas∕ GaAs quantum well structures grown by molecular-beam epitaxy

HF Liu, V Dixit, N Xiang - Journal of Applied Physics, 2006 - pubs.aip.org
High-resolution x-ray diffraction HRXRD and photoluminescence PL have been used to
study the diffusion of atoms in 8-nm Ga0. 628In0. 372N0. 015As0. 985/GaAs quantum well …