A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …

JA Spencer, AL Mock, AG Jacobs, M Schubert… - Applied Physics …, 2022 - pubs.aip.org
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …

Indium oxide—a transparent, wide-band gap semiconductor for (opto) electronic applications

O Bierwagen - Semiconductor Science and Technology, 2015 - iopscience.iop.org
The present review takes a semiconductor physics perspective to summarize the state-of-the
art of In 2 O 3 in relation to applications. After discussing conventional and novel …

Direct optical band gap measurement in polycrystalline semiconductors: A critical look at the Tauc method

A Dolgonos, TO Mason, KR Poeppelmeier - Journal of solid state chemistry, 2016 - Elsevier
The direct optical band gap of semiconductors is traditionally measured by extrapolating the
linear region of the square of the absorption curve to the x-axis, and a variation of this …

Variation in the In2O3 Crystal Phase Alters Catalytic Performance toward the Reverse Water Gas Shift Reaction

J Wang, CY Liu, TP Senftle, J Zhu, G Zhang, X Guo… - ACS …, 2019 - ACS Publications
Understanding the structure–catalytic activity relationship is crucial for developing new
catalysts with desired performance. In this contribution, we report the performance of In2O3 …

Transparent conducting oxides for photovoltaics: Manipulation of fermi level, work function and energy band alignment

A Klein, C Körber, A Wachau, F Säuberlich… - Materials, 2010 - mdpi.com
Doping limits, band gaps, work functions and energy band alignments of undoped and
donor-doped transparent conducting oxides ZnO, In 2 O 3, and SnO 2 as accessed by X-ray …

Nature of the Band Gap of Revealed by First-Principles Calculations <?format ?>and X-Ray Spectroscopy

A Walsh, JLF Da Silva, SH Wei, C Körber, A Klein… - Physical review …, 2008 - APS
Bulk and surface sensitive x-ray spectroscopic techniques are applied in tandem to show
that the valence band edge for In 2 O 3 is found significantly closer to the bottom of the …

Quasiparticle bands and spectra of polymorphs

J Furthmüller, F Bechstedt - Physical Review B, 2016 - APS
Within the framework of density functional theory and Hedin's GW approximation for single-
particle excitations, we present quasiparticle band structures and densities of states for two …

Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral

PDC King, TD Veal, F Fuchs, CY Wang, DJ Payne… - Physical Review B …, 2009 - APS
The bulk and surface electronic structure of In 2 O 3 has proved controversial, prompting the
current combined experimental and theoretical investigation. The band gap of single …

High-performance thin-film transistor with atomic layer deposition (ALD)-derived indium–gallium oxide channel for back-end-of-line compatible transistor applications …

JS Hur, MJ Kim, SH Yoon, H Choi… - … Applied Materials & …, 2022 - ACS Publications
In this paper, the feasibility of an indium–gallium oxide (In2 (1-x) Ga2 x O y) film through
combinatorial atomic layer deposition (ALD) as an alternative channel material for back-end …

Intrinsic -Type Behavior in Transparent Conducting Oxides: <?format ?>A Comparative Hybrid-Functional Study of , , and ZnO

P Ágoston, K Albe, RM Nieminen, MJ Puska - Physical review letters, 2009 - APS
We present a comparative study of oxygen vacancies in In 2 O 3, SnO 2, and ZnO based on
the hybrid-functional method within the density-functional theory (DFT). For In 2 O 3 and SnO …