Emissive displays based on light‐emitting diodes (LEDs), with high pixel density, luminance,
efficiency, and large color gamut, are of great interest for applications such as watches …

Based on density functional theory, we investigate the ferroelectric and piezoelectric
properties of the AlN/ScN superlattice, consisting of ScN and AlN buckled monolayers …

GaN/AlGaN multiple quantum wells (MQWs) are grown on a 201 ð Þ-oriented b-Ga2O3
substrate. The optical and structural characteristics of the MQW structure are compared with …

We demonstrate very high luminous efficacy InGaN-based green light-emitting diodes
(LEDs) grown on c-plane patterned sapphire substrates (PSS) using metal organic chemical …

Significant enhancement in green emission by integrating a thin AlInN barrier layer, or
interlayer (IL), in an InGaN/GaN multiple quantum well (MQW) is demonstrated. The MQWs …

In this study, we have demonstrated a high-efficiency InGaN red (625 nm) light-emitting
diode (LED) with an external quantum efficiency (EQE) of 10.5% at a current density of 10 …

The recombination rates are measured and analyzed for red-emitting InGaN light-emitting
diodes (LEDs) to better understand the factors that limit their efficiency. InGaN/AlGaN/GaN …

High crystalline quality coaxial GaInN/GaN multiple quantum shells (MQSs) grown on
dislocation-free nanowires are highly in demand for efficient white-/micro-light-emitting …

The recombination rates in InGaN/AlGaN/GaN multiple quantum wells (MQWs) emitting in
the green-yellow and grown with different Al compositions in the AlGaN interlayer (IL) are …

We construct LaN-based artificial superlattices to investigate the ferroelectricity and
piezoelectricity using the volume matching conditions of the parent components that soften …