The use of surfactants to control specific aspects of the vapor-phase epitaxial growth
process is beginning to be studied for both the elemental and III/V semiconductors. To date …

The use of surfactants for control of specific aspects of the VPE growth process is beginning
to be studied for both the elemental and III/V semiconductors. The objective is to change the …

In this Letter, we report on the use of atomic force microscopy to study the thermal stability of
self-assembled monolayers (SAM) of octadecylphosphonic acid (OPA) grown on mica. The …

Recently, the addition of the isoelectronic surfactant Sb during organometallic vapor phase
epitaxy (OMVPE) of GaInP was shown to eliminate ordering, resulting in a significant change …

PbTe quantum dots (QD) were fabricated on BaF2 (111) substrates by molecular beam
epitaxy under Volmer–Weber (V–W) growth mode. The morphological aspects of the …

We report on the growth and characterization of CdTe quantum dots on Si (111) by direct
island nucleation. The samples were grown by hot wall epitaxy on Si (111) substrates …

The effect of the isoelectronic surfactant Bi on surface structure and ordering has been
studied for GaInP semiconductor alloys grown by organometallic vapor-phase epitaxy. A …

Core-level spectra of individual heteroepitaxial nanocrystals were measured with a
spectroscopic photoemission and low-energy electron microscope that allows laterally …

ZnO quantum dots (QDs) were fabricated on Si (001) substrates by pulsed laser deposition
(PLD) and subsequent thermal annealing. X-ray diffraction and transmission electron …

This paper explores the effects of surfactants isoelectronic with P on the step structure and
ordering in GaInP grown by organometallic vapor phase epitaxy. Three elements, Bi, Sb …