Ü Özgür, YI Alivov, C Liu, A Teke… - Journal of applied …, 2005 - pubs.aip.org
The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60 meV) which could lead to lasing action …
This first systematic, authoritative and thorough treatment in one comprehensive volume presents the fundamentals and technologies of the topic, elucidating all aspects of ZnO …
Y Zhang, M Hu, Z Wang - Nano Energy, 2020 - Elsevier
ZnO based self-powered photodetector (PD) has great application potential in distributing sensor networks and internet of things. However, a large number of surface or interface …
A conversion from ohmic to rectifying behavior is observed for Au contacts on atomically ordered polar ZnO surfaces following remote, room-temperature oxygen plasma treatment …
Ni, Ir, Pd, Pt, and silver oxide Schottky contacts were fabricated on the Zn-polar face of hydrothermally grown, bulk ZnO. A relationship was found between the barrier height of the …
H Frenzel, A Lajn, H Von Wenckstern… - Advanced …, 2010 - Wiley Online Library
Metal‐semiconductor field‐effect transistors (MESFETs) are widely known from opaque high‐ speed GaAs or high‐power SiC and GaN technology. For the emerging field of transparent …
Y Hou, Z Mei, X Du - JournaL of physics D: AppLied physics, 2014 - iopscience.iop.org
It is indispensable to develop wide-band-gap based ultraviolet (UV) photodetectors (PDs), which are one of the basic building blocks of solid state UV optoelectronic devices. In the …
A method of fabricating highly rectifying Schottky contacts on n-type ZnO using silver oxide has been developed and used to compare diode performance on hydrothermal and melt …
Planar Pd, Pt, Au, and Ag Schottky diodes with low ideality factors were fabricated on the Zn- polar (0001) and O-polar (000 1) faces of bulk, single crystal ZnO wafers. The diodes were …