One-dimensional ZnO nanostructures: solution growth and functional properties

S Xu, ZL Wang - Nano research, 2011 - Springer
Abstract One-dimensional (1D) ZnO nanostructures have been studied intensively and
extensively over the last decade not only for their remarkable chemical and physical …

A comprehensive review of ZnO materials and devices

Ü Özgür, YI Alivov, C Liu, A Teke… - Journal of applied …, 2005 - pubs.aip.org
The semiconductor ZnO has gained substantial interest in the research community in part
because of its large exciton binding energy (60 meV) which could lead to lasing action …

[图书][B] Zinc oxide: fundamentals, materials and device technology

H Morkoç, Ü Özgür - 2008 - books.google.com
This first systematic, authoritative and thorough treatment in one comprehensive volume
presents the fundamentals and technologies of the topic, elucidating all aspects of ZnO …

Enhanced performances of p-si/n-ZnO self-powered photodetector by interface state modification and pyro-phototronic effect

Y Zhang, M Hu, Z Wang - Nano Energy, 2020 - Elsevier
ZnO based self-powered photodetector (PD) has great application potential in distributing
sensor networks and internet of things. However, a large number of surface or interface …

Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO

HL Mosbacker, YM Strzhemechny, BD White… - Applied Physics …, 2005 - pubs.aip.org
A conversion from ohmic to rectifying behavior is observed for Au contacts on atomically
ordered polar ZnO surfaces following remote, room-temperature oxygen plasma treatment …

Influence of oxygen vacancies on Schottky contacts to ZnO

MW Allen, SM Durbin - Applied Physics Letters, 2008 - pubs.aip.org
Ni, Ir, Pd, Pt, and silver oxide Schottky contacts were fabricated on the Zn-polar face of
hydrothermally grown, bulk ZnO. A relationship was found between the barrier height of the …

Recent progress on ZnO‐based metal‐semiconductor field‐effect transistors and their application in transparent integrated circuits

H Frenzel, A Lajn, H Von Wenckstern… - Advanced …, 2010 - Wiley Online Library
Metal‐semiconductor field‐effect transistors (MESFETs) are widely known from opaque high‐
speed GaAs or high‐power SiC and GaN technology. For the emerging field of transparent …

Semiconductor ultraviolet photodetectors based on ZnO and MgxZn1− xO

Y Hou, Z Mei, X Du - JournaL of physics D: AppLied physics, 2014 - iopscience.iop.org
It is indispensable to develop wide-band-gap based ultraviolet (UV) photodetectors (PDs),
which are one of the basic building blocks of solid state UV optoelectronic devices. In the …

Silver oxide Schottky contacts on n-type ZnO

MW Allen, SM Durbin, JB Metson - Applied Physics Letters, 2007 - pubs.aip.org
A method of fabricating highly rectifying Schottky contacts on n-type ZnO using silver oxide
has been developed and used to compare diode performance on hydrothermal and melt …

Metal Schottky diodes on Zn-polar and O-polar bulk ZnO

MW Allen, MM Alkaisi, SM Durbin - Applied physics letters, 2006 - pubs.aip.org
Planar Pd, Pt, Au, and Ag Schottky diodes with low ideality factors were fabricated on the Zn-
polar (0001) and O-polar (000 1) faces of bulk, single crystal ZnO wafers. The diodes were …