Achieving reliable and ultrafast memristors via artificial filaments in silk fibroin

Z Li, J Wang, L Xu, L Wang, H Shang, H Ying… - Advanced …, 2024 - Wiley Online Library
The practical implementation of memristors in neuromorphic computing and biomimetic
sensing suffers from unexpected temporal and spatial variations due to the stochastic …

Engineering of TiN/ZnO/SnO2/ZnO/Pt multilayer memristor with advanced electronic synapses and analog switching for neuromorphic computing

M Ismail, S Kim, M Rasheed, C Mahata, M Kang… - Journal of Alloys and …, 2024 - Elsevier
The two-terminal memristor is a promising neuromorphic artificial electronic device,
mirroring biological synapses in structure and replicating various synaptic functions. Despite …

[HTML][HTML] Quantum Dots for Resistive Switching Memory and Artificial Synapse

G Kim, S Park, S Kim - Nanomaterials, 2024 - mdpi.com
Memristor devices for resistive-switching memory and artificial synapses have emerged as
promising solutions for overcoming the technological challenges associated with the von …

Modulating conductive filaments via thermally stable bilayer organic memristor

Y Zheng, X Guo, J Jiang, Y Fu, Q Wang… - Applied Physics Letters, 2024 - pubs.aip.org
The basic unit of information in conductive bridge random access memory based on the
redox mechanism of metal ions is physically stored in a conductive filament (CF). Therefore …

Solution-Processed TiO2/ZnFe2O4 Heterostructure for Stable Multilevel Memristor with Room-Temperature Reactive Gas Selectivity

P Kaith, P Garg, V Nagar, A Bera - ACS Applied Materials & …, 2024 - ACS Publications
Solution-processed oxide-based heterojunctions that work in diverse directions will be ideal
alternatives for cost-effective, stable, and multifunctional devices. Here, we have reported a …

Improved ferroelectricity and endurance in Ca doped Hf0. 5Zr0. 5O2 films

L Yin, X Li, D Xiao, S He, Y Zhao, Q Peng, Q Yang… - Ceramics …, 2024 - Elsevier
Abstract Doped Hf 0.5 Zr 0.5 O 2 materials have drawn increasing attention due to the
excellent ferroelectric properties, but the relevant research is just in the preliminary stage …

Controlling the digital-to-analog switching in HfO2-based memristors via modulating the oxide thickness

L Li, Z Ye, M Wu, L Ma, L Li, G Rao - Journal of Alloys and Compounds, 2024 - Elsevier
The HfO 2-based memristors have been acknowledged as a highly potential candidate for
nonvolatile memory and neuromorphic computing applications. However, the analog …

Performance improvement of bilayer memristor based on hafnium oxide by Ti/W synergy and its synaptic behavior

F Wang, F Wang, X Lin, P Liu, Z Li, H Du, X Chen, K Hu… - Vacuum, 2024 - Elsevier
Bilayer and multi-layer structures can effectively improve the performance of memristors, but
the oxide/metal interface during the resistance switching process affects its reliability and …

Conduction mechanisms analysis of ZrO2-based electrochemical metallization RRAM in different RESET modes

J Xue, D Yang, J Wang, H Wang, Y Dai, S Wang… - Chinese Journal of …, 2024 - Elsevier
Resistive random access memory (RRAM) based on electrochemical metallization (ECM) is
a promising candidate for future nonvolatile memory applications. This paper discusses the …

Highly Uniform Silver Ion Memristors With Ultralow Leakage Current for Constructing Homogeneously Spiking LIF Neurons

S Ke, F Tong, Y Jin, Y Xiao, J Meng… - … on Electron Devices, 2024 - ieeexplore.ieee.org
The stable and threshold-friendly electrochemical-metallization-based threshold switching
(TS) memristors are promising candidates to build artificial leaky integrate-and-fire (LIF) …