Recent status of chemical bath deposited metal chalcogenide and metal oxide thin films
Presently nanocrystalline materials have opened a new chapter in the field of electronic
applications, since material properties could be changed by changing the crystallite size …
applications, since material properties could be changed by changing the crystallite size …
Cu2S Reduced Graphene Oxide Composite for High-Efficiency Quantum Dot Solar Cells. Overcoming the Redox Limitations of S2–/Sn2– at the Counter …
Polysulfide electrolyte that is employed as a redox electrolyte in quantum dot sensitized
solar cells provides stability to the cadmium chalcogenide photoanode but introduces …
solar cells provides stability to the cadmium chalcogenide photoanode but introduces …
Tandem-layered quantum dot solar cells: tuning the photovoltaic response with luminescent ternary cadmium chalcogenides
Photon management in solar cells is an important criterion as it enables the capture of
incident visible and infrared photons in an efficient way. Highly luminescent CdSeS quantum …
incident visible and infrared photons in an efficient way. Highly luminescent CdSeS quantum …
The effect of complexing agents in chemical solution deposition of metal chalcogenide thin films
Among the chemical deposition methods to produce thin films, chemical deposition from
aqueous solution (CD) is the oldest and most studied process in which the substrate is …
aqueous solution (CD) is the oldest and most studied process in which the substrate is …
Effect of annealing on structural and optoelectronic properties of nanostructured ZnSe thin films
Thin films of ZnSe were deposited on soda lime glass substrates by thermal evaporation and
annealed in vacuum at various temperatures in the range of 100–300° C. Structural and …
annealed in vacuum at various temperatures in the range of 100–300° C. Structural and …
High refractive index and third-order nonlinear optical susceptibility of nanostructured ZnSe/FTO thin films: towards smart multifunctional optoelectronic materials
The present work aims to prepare the nanostructured ZnSe films with high quality onto a
fluorine-doped tin oxide glass substrate (FTO/glass) by using the thermal evaporation …
fluorine-doped tin oxide glass substrate (FTO/glass) by using the thermal evaporation …
Polymeric carbon nitride modified polyacrylonitrile fabrics with efficient self-cleaning and water disinfection under visible light
Bacterial reproduction in fabric has been a threat to human health for centuries. Although
several self-cleaning fabrics have been tried, serious drawbacks such as complex …
several self-cleaning fabrics have been tried, serious drawbacks such as complex …
Optical constants and fitted transmittance spectra of varies thickness of polycrystalline ZnSe thin films in terms of spectroscopic ellipsometry
ER Shaaban - Journal of alloys and compounds, 2013 - Elsevier
Different thickness of Zinc selenide (ZnSe) thin films were deposited onto glass substrates
by the thermal evaporation technique. Their structural characteristics were studied by X-ray …
by the thermal evaporation technique. Their structural characteristics were studied by X-ray …
The distribution of barrier heights in MIS type Schottky diodes from current–voltage–temperature (I–V–T) measurements
A Tataroğlu, Ş Altındal - Journal of Alloys and Compounds, 2009 - Elsevier
The forward bias current–voltage–temperature (I–V–T) characteristics of the Au/SiO2/n-Si
(MIS) type Schottky diodes (SDs) have been investigated in the temperature range of 300 …
(MIS) type Schottky diodes (SDs) have been investigated in the temperature range of 300 …
The Richardson constant and barrier inhomogeneity at Au/Si3N4/n-Si (MIS) Schottky diodes
A Tataroğlu, FZ Pür - Physica Scripta, 2013 - iopscience.iop.org
Si 3 N 4 films were deposited on n-type silicon substrate by the radio frequency magnetron
sputtering technique. The current–voltage (I–V) characteristics of Au/Si 3 N 4/n-Si (metal …
sputtering technique. The current–voltage (I–V) characteristics of Au/Si 3 N 4/n-Si (metal …