Hydrogenated amorphous silicon oxynitride (a-SiOxNy: H) films, which are deposited by the
plasma decomposition of silane and nitrous oxide at low temperatures (Tdep< 300° C), are …

This paper reports current-voltage characteristics and pressure-voltage transition curves
from the weak-current α-mode to the strong-current γ-mode for rf capacitive discharges in N …

This work reports on the local structure and bonds of amorphous silicon oxynitride thin films,
deposited by plasma enhanced chemical vapor deposition. The dependence of the …

In this work we study the structural properties and mechanical stress of silicon oxynitride
(SiOxNy) films obtained by plasma enhanced chemical vapor deposition (PECVD) …

In this work, we report studies on the residual stress and structure of silicon oxynitride films
deposited by PECVD with nitrogen atomic percent varying from 24 to 55. The stress …

Thin films of nanocrystalline SiO x N y are studied in view of their application in silicon
heterojunction (SHJ) solar cells. In particular, the formation of the nanocrystals and their …

We report measurements of the breakdown curves of an rf capacitive discharge in low
pressure nitrous oxide. The electron drift velocity was determined from the locations of the …

In this work we investigated the structural and chemical properties of amorphous silicon
oxynitride thin films, with distinct composition, deposited by plasma enhanced chemical …

Self-sustained corrugated membranes with 3D topography are fabricated utilizing low stress
silicon oxynitride (SiOxNy) films obtained by the PECVD technique at low temperatures. The …

The potential of designing silicon-based oxide/nitride with new properties through
nanostructure and chemical tuning continues to captivate researchers. In this context, while …