(57) ABSTRACT A flash memory device, such as a NAND flash, having an array of floating
gate transistor memory cells arranged in a first and second addressable blocks. A voltage …

According to an aspect of the invention is provided a non Volatile semiconductor memory
device, comprising a memory cell including an anti-fuse storage element and a selection …

US7342836B2 - One time programmable latch and method - Google Patents
US7342836B2 - One time programmable latch and method - Google Patents One time …

A programmable latch circuit (100) can include a programmable data circuit (104) with a
data load path (116) that can enable a data value to be recalled into a volatile latch (102). A …

Subtraction circuit. The circuit includes a second current-to 3,636,530 A 1/1972 Market al.
Voltage converter. The circuit also includes a second current 3,676,717 A 7, 1972 Lockwood …

(57) ABSTRACT A semiconductor integrated circuit comprises an electrically programmable
fuse element that is provided between a programming Voltage node and a latch node, and a …

A device includes an anti-fuse including a first electrode that can be selectively coupled to a
first voltage reference and a second electrode that can be selectively coupled to a second …

Non-volatile (NV) memories can be widely used in many electronics applications to store
data when power is not present. Examples of non-volatile memories include electri cally …

CTRL rent source (216') can generate a current (IBASE) that can be mirrored in test sections
(252-0 and 252-1) and compared to a current drawn by either programmable element (210 …

2. Description of Related Art In a semiconductor device, such as DRAM (Dynamic Random
Access Memory), a faulty memory cell is replaced with a redundant memory cell to redress …