Silicene, a promising new 2D material

H Oughaddou, H Enriquez, MR Tchalala… - Progress in Surface …, 2015 - Elsevier
Silicene is emerging as a two-dimensional material with very attractive electronic properties
for a wide range of applications; it is a particularly promising material for nano-electronics in …

Reactive molecular dynamics simulation of early stage of dry oxidation of Si (100) surface

MA Pamungkas, M Joe, BH Kim, KR Lee - Journal of Applied Physics, 2011 - pubs.aip.org
Initial stage of oxidation of Si (100) surface by O 2 molecules was investigated in atomic
scale by molecular dynamics (MD) simulation at 300 K and 1200 K without external …

Dihydride dimer structures on the Si (100): H surface studied by low-temperature scanning tunneling microscopy

A Bellec, D Riedel, G Dujardin, N Rompotis… - Physical Review B …, 2008 - APS
Surface reconstructions on the hydrogenated Si (100): H surface are observed and
investigated by using a low-temperature (5 K) scanning tunneling microscope (STM). In …

Diffusion of oxygen atom in the topmost layer of the Si (1 0 0) surface: Structures and oxidation kinetics

A Hemeryck, N Richard, A Estève, MD Rouhani - Surface science, 2007 - Elsevier
The incorporations and migrations of the atomic oxygen in the topmost layer Si (100)-p (2×
2) silicon surface, are investigated theoretically using density functional theory. We show …

Strain-driven diffusion process during silicon oxidation investigated by coupling density functional theory and activation relaxation technique

N Salles, N Richard, N Mousseau… - The Journal of Chemical …, 2017 - pubs.aip.org
The reaction of oxygen molecules on an oxidized silicon model-substrate is investigated
using an efficient potential energy hypersurface exploration that provides a rich picture of the …

Tip-induced oxidation of silicene nano-ribbons

MR Tchalala, H Enriquez, A Bendounan… - Nanoscale …, 2020 - pubs.rsc.org
We report on the oxidation of self-assembled silicene nanoribbons grown on the Ag (110)
surface using scanning tunneling microscopy and high-resolution photoemission …

Oxidation of Germanium and Silicon surfaces (100): a comparative study through DFT methodology

C Mastail, I Bourennane, A Estève… - IOP Conference …, 2012 - iopscience.iop.org
Abstract Density Functional Theory calculations are used to map out the preferential oxygen
molecule adsorption sites and oxygen atom incorporation on germanium (100) surface. A …

Self-propagating reaction produces near-ideal functionalization of Si (100) and flat surfaces

MA Hines, MF Faggin, A Gupta… - The Journal of …, 2012 - ACS Publications
Chemical functionalization of the technologically important face of silicon, Si (100), to form a
passivated semiconductor/organic interface would enable a wide variety of applications …

Identifying atomic geometry and electronic structure of (2× 3)-Sr/Si (100) surface and its initial oxidation

W Du, B Wang, L Xu, Z Hu, X Cui, BC Pan… - The Journal of …, 2008 - pubs.aip.org
We present a joint experimental and theoretical study on the geometric and electronic states
and the initial oxidation of the (2× 3)-Sr/Si (100) surface. With scanning tunneling …

Fundamental steps towards interface amorphization during silicon oxidation: Density functional theory calculations

A Hémeryck, A Estève, N Richard… - Physical Review B …, 2009 - APS
Density functional theory calculations reveal a two-step scenario for silicon oxidation
nucleation. We detail a quasibarrierless semihexagonal oxide nucleus, involving an …