Challenges and solutions of the TFET circuit design
Z Lin, P Chen, L Ye, X Yan, L Dong… - … on Circuits and …, 2020 - ieeexplore.ieee.org
Steep sub-threshold interband tunnel field-effect transistors (TFETs) are promising
candidates for low-supply voltage applications with better performance than the traditional …
candidates for low-supply voltage applications with better performance than the traditional …
A charge-based capacitance model for double-gate tunnel FETs with closed-form solution
B Lu, H Lu, Y Zhang, Y Zhang, X Cui… - … on Electron Devices, 2017 - ieeexplore.ieee.org
Based on an analytical surface potential and a simple mathematical approximation for the
source depletion width, a physics-based capacitance model with closed form for silicon …
source depletion width, a physics-based capacitance model with closed form for silicon …
Ultra-low-power and performance-improved logic circuit using hybrid TFET-MOSFET standard cells topologies and optimized digital front-end process
Z Wang, L Ye, Q Huang, K Du, Z Tan… - … on Circuits and …, 2020 - ieeexplore.ieee.org
Tunnel FET is recognized as one of the most promising candidates for ultra-low power
applications due to its ultra-low off current and CMOS compatibility. However, some …
applications due to its ultra-low off current and CMOS compatibility. However, some …
Fully analytical carrier-based charge and capacitance model for hetero-gate-dielectric tunneling field-effect transistors
B Lu, H Lu, Y Zhang, Y Zhang, X Cui… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
Based on an analytical surface potential model incorporating the channel inversion carriers,
a physics-based terminal capacitance model with closed-form solutions for a hetero-gate …
a physics-based terminal capacitance model with closed-form solutions for a hetero-gate …
Capacitance Modeling With Charge Partitions Covering Full-Region Operations of TFETs
F Zhang, W Dai, K Wang, Y Li, B Peng… - … on Electron Devices, 2024 - ieeexplore.ieee.org
An accurate physics-based capacitance model is developed covering full-region operations
of silicon TFET (Si-TFET) with all biasing conditions. The intrinsic and parasitic capacitances …
of silicon TFET (Si-TFET) with all biasing conditions. The intrinsic and parasitic capacitances …
An advanced adiabatic logic using Gate Overlap Tunnel FET (GOTFET) devices for ultra-low power VLSI sensor applications
S Vidhyadharan, R Yadav, S Hariprasad… - Analog Integrated Circuits …, 2020 - Springer
Adiabatic circuits are ideally suited for implementing RFID tags and biomedical sensors due
to their ultra-low power requirements. This paper presents a novel Gate Overlap Tunnel FET …
to their ultra-low power requirements. This paper presents a novel Gate Overlap Tunnel FET …
TFET Circuit Configurations Operating below 60 mV/dec
Tunnel Field-Effect Transistors (TFETs) offer more energy efficient alternative to CMOS for
design of low power circuits. In spite of this potential, circuits based on TFETs have not been …
design of low power circuits. In spite of this potential, circuits based on TFETs have not been …
[图书][B] TFET integrated circuits: from perspective towards reality
This book describes the physical operation of the Tunnel Field-effect Transistor (TFET) and
circuits built with this device. Whereas the majority of publications on TFETs describe in …
circuits built with this device. Whereas the majority of publications on TFETs describe in …
A novel TFET 8T-SRAM cell with improved noise margin and stability
SH Fani, A Peiravi, H Farkhani… - 2018 IEEE 21st …, 2018 - ieeexplore.ieee.org
This paper presents a novel low-power Tunneling Field-Effect-Transistor (TFET) 8T-SRAM
cell. The proposed cell uses a supply feedback to improve its stability. The new structure at …
cell. The proposed cell uses a supply feedback to improve its stability. The new structure at …
TFET Integrated Circuits
Previous trends in System-on-Chip (SoC) design were focused on improving the
performance of the system without giving significant consideration to power consumption …
performance of the system without giving significant consideration to power consumption …