Promises and prospects of two-dimensional transistors

Y Liu, X Duan, HJ Shin, S Park, Y Huang, X Duan - Nature, 2021 - nature.com
Abstract Two-dimensional (2D) semiconductors have attracted tremendous interest as
atomically thin channels that could facilitate continued transistor scaling. However, despite …

2D materials in flexible electronics: recent advances and future prospectives

AK Katiyar, AT Hoang, D Xu, J Hong, BJ Kim… - Chemical …, 2023 - ACS Publications
Flexible electronics have recently gained considerable attention due to their potential to
provide new and innovative solutions to a wide range of challenges in various electronic …

Ballistic two-dimensional InSe transistors

J Jiang, L Xu, C Qiu, LM Peng - Nature, 2023 - nature.com
Abstract The International Roadmap for Devices and Systems (IRDS) forecasts that, for
silicon-based metal–oxide–semiconductor (MOS) field-effect transistors (FETs), the scaling …

Scaled indium oxide transistors fabricated using atomic layer deposition

M Si, Z Lin, Z Chen, X Sun, H Wang, PD Ye - Nature Electronics, 2022 - nature.com
To continue to improve integrated circuit performance and functionality, scaled transistors
with short channel lengths and low thickness are needed. But further scaling of silicon …

Bilayer tungsten diselenide transistors with on-state currents exceeding 1.5 milliamperes per micrometre

R Wu, Q Tao, J Li, W Li, Y Chen, Z Lu, Z Shu… - Nature …, 2022 - nature.com
Two-dimensional semiconductors such as layered transition metal dichalcogenides can
offer superior immunity to short-channel effects compared with bulk semiconductors such as …

Van der Waals heterostructures for high‐performance device applications: challenges and opportunities

SJ Liang, B Cheng, X Cui, F Miao - Advanced Materials, 2020 - Wiley Online Library
The discovery of two‐dimensional (2D) materials with unique electronic, superior
optoelectronic, or intrinsic magnetic order has triggered worldwide interest in the fields of …

The road for 2D semiconductors in the silicon age

S Wang, X Liu, P Zhou - Advanced Materials, 2022 - Wiley Online Library
Continued reduction in transistor size can improve the performance of silicon integrated
circuits (ICs). However, as Moore's law approaches physical limits, high‐performance …

Property–activity relationship of black phosphorus at the nano–bio interface: from molecules to organisms

G Qu, T Xia, W Zhou, X Zhang, H Zhang, L Hu… - Chemical …, 2020 - ACS Publications
As a novel member of the two-dimensional nanomaterial family, mono-or few-layer black
phosphorus (BP) with direct bandgap and high charge carrier mobility is promising in many …

extremely thin amorphous indium oxide transistors

A Charnas, Z Zhang, Z Lin, D Zheng… - Advanced …, 2024 - Wiley Online Library
Amorphous oxide semiconductor transistors have been a mature technology in display
panels for upward of a decade, and have recently been considered as promising back‐end …

[HTML][HTML] Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility

P Yang, J Zha, G Gao, L Zheng, H Huang, Y Xia, S Xu… - Nano-micro letters, 2022 - Springer
The lack of stable p-type van der Waals (vdW) semiconductors with high hole mobility
severely impedes the step of low-dimensional materials entering the industrial circle …