Two‐Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications

G Zhang, H Wu, L Zhang, L Yang, Y Xie, F Guo, H Li… - Small, 2022 - Wiley Online Library
Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including
topological insulators and topological semimetals, which combine atomically flat 2D layers …

Investigation of thermoelectric and magnetotransport properties of single crystalline Bi2Se3 topological insulator

P Singha, S Das, N Rana, S Mukherjee… - Journal of Applied …, 2024 - pubs.aip.org
The realization of remarkable thermoelectric (TE) properties in a novel single-crystalline
quantum material is a topic of prime interest in the field of thermoelectricity. It necessitates a …

Topological transport properties of highly oriented Bi2Te3 thin film deposited by sputtering

L Pandey, S Husain, V Barwal, S Hait… - Journal of Physics …, 2023 - iopscience.iop.org
Topological insulators (TIs) are the promising materials for next-generation technology due
to their exotic features such as spin momentum locking, conducting surface states, etc …

Quantitative Analysis of Weak Antilocalization Effect of Topological Surface States in Topological Insulator BiSbTeSe2

H Li, HW Wang, Y Li, H Zhang, S Zhang, XC Pan… - Nano Letters, 2019 - ACS Publications
Quantitative analysis of the weak antilocalization (WAL) effect of topological surface states in
topological insulators is of tremendous importance. The major obstacle to achieve accurate …

Spin-flop quasi metamagnetic, anisotropic magnetic, and electrical transport behavior of Ho substituted kagome magnet

J Casey, SS Samatham, C Burgio, N Kramer… - Physical Review …, 2023 - APS
We report on the magnetic and electrical properties of a (Mn 3 Sn) 2 triangular network
kagome structured high quality Ho substituted ErMn 6 Sn 6 single-crystal sample by …

Magnetoresistance and Electric Polarization in the LuxMn1–xS Compound

SS Aplesnin, MN Sitnikov, AM Kharkov… - … status solidi (b), 2022 - Wiley Online Library
Using the Hall effect measurements, it is established that the sign of carriers in the LuxMn1–
xS solid solutions changes upon temperature and concentration variations. The extrema in …

Correlation between changeover from weak antilocalization (WAL) to weak localization (WL) and positive to negative magnetoresistance in S-doped Bi1. 5Sb0. 5Te1 …

M Singh, L Ghosh, VK Gangwar, Y Kumar, D Pal… - Applied Physics …, 2022 - pubs.aip.org
The magneto-transport and angle-resolved photoelectron spectroscopy (ARPES) of the S-
doped Bi 1.5 Sb 0.5 Te 1.3 Se 1.7 system have been investigated. Both the positive …

Temperature evolution of transverse magnetoresistance due to forming the topological insulator state in single-crystalline n-type Bi2Te2. 7Se0. 3

O Ivanov, M Yaprintsev, E Yaprintseva… - Physica …, 2024 - iopscience.iop.org
Specific features in magnetotransport properties due to gradual forming the topological
insulator state in sample of single-crystalline n-type Bi 2 Te 2.7 Se 0.3 during its cooling …

Fabrication and Characterization of a Self-Powered n-Bi2Se3/p-Si Nanowire Bulk Heterojunction Broadband Photodetector

X Wang, Y Tang, W Wang, H Zhao, Y Song, C Kang… - Nanomaterials, 2022 - mdpi.com
In the present study, vacuum evaporation method is used to deposit Bi2Se3 film onto Si
nanowires (NWs) to form bulk heterojunction for the first time. Its photodetector is self …

Impedance, dielectric susceptibility and inductance in HoxMn1-xS solid solutions

M Sitnikov, A Kharkov, H Abdelbaki… - AIP Conference …, 2024 - pubs.aip.org
The impedance, capacitance and inductance in HoxMn1-xS solid solutions were measured
at fixed frequencies in the range of 1 kHz–300 kHz from temperature. Maxima in the …