In this review paper, several new approaches about the 3C-SiC growth are been presented.
In fact, despite the long research activity on 3C-SiC, no devices with good electrical …

Highly-oriented 3C-SiC possesses good out-of-plane orientation uniformity, and has more
potential to obtain uniform surface quality during ultra-precision machining, compared with …

Despite the promising properties, the problem of cubic silicon carbide (3C-SiC)
heteroepitaxy on silicon has not yet been resolved and its use in microelectronics is limited …

Exploring the phonon characteristics of novel group-IV binary XC (X= Si, Ge, Sn) carbides
and their polymorphs has recently gained considerable scientific/technological interest as …

Surface and subsurface damage are still persistent technical challenges for the abrasive
machining hot pressed-silicon carbide (HP-SiC) ceramics. Therefore, an investigation of the …

Abstract Recently, fabricating one-dimensional (1D) nanomaterials on C/C composite has
been recognized effective to improve the thermal shock resistance of the coated composites …

This work provides a comprehensive investigation of nitrogen and aluminum doping and its
consequences for the physical properties of 3C-SiC. Free-standing 3C-SiC heteroepitaxial …

Threading dislocations (TDs) in epitaxial layers of silicon carbide (SiC) exert a negative
impact on the device performance, thereby hampering the commercialization of SiC power …

In this study, the surface of SiC was deoxidized by a simple NaOH etching treatment at room
temperature. The synthesized SiC catalysts were tested for the removal of MB dyes under …

Novel zinc-blende (zb) group-IV binary XC and ternary XxY1− xC alloys (X, Y≡ Si, Ge, and
Sn) have recently gained scientific and technological interest as promising alternatives to …