Silicon etching in Cl 2-based plasmas is an important step for the fabrication of IC circuits but
the plasma surface interactions involved in this process remain poorly understood. Based on …

This paper reviews recent progress in the development of time-resolved diagnostics to
probe high-density pulsed plasma sources. We focus on time-resolved measurements of …

Meter-scale of the large area inductively coupled plasma etchers with the capacitive power
coupling are widely applied for the mass production of OLED (organic light emitting diode) …

Neutral gas temperature (T g) is measured in an industrial high-density inductively coupled
etch reactor operating in CF 4⁠, SF 6⁠, O 2⁠, Cl 2⁠, or HBr plasmas. Two laser diodes are …

UV/VUV photon fluxes in plasma materials processing have a variety of effects ranging from
producing damage to stimulating synergistic reactions. Although in plasma etching …

In this paper, simulations are performed to gain a better insight into the properties of a Cl
2/Ar plasma, with and without O 2, during plasma etching of Si. Both plasma and surface …

The dynamic of charged particles in pulsed plasma is relatively well known since the 1990s.
In contrast, works reporting on the impact of the plasma modulation frequency and duty cycle …

Atomic-or nanometer-scale roughness on feature surfaces has become an important issue
to be resolved in the fabrication of nanoscale devices in industry. Moreover, in some cases …

An inductively coupled radio-frequency plasma in chlorine is investigated via a global
(volume-averaged) model, both in continuous and square wave modulated power input …

Absolute densities of chlorine atoms were determined in an inductively coupled plasma in
pure chlorine gas as a function of gas pressure and RF power by two-photon laser-induced …