GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell
X Guan, J Becdelievre, A Benali, C Botella, G Grenet… - Nanoscale, 2016 - pubs.rsc.org
We propose an arsenic-capping/decapping method, allowing the growth of an epitaxial shell
around the GaAs nanowire (NW) core which is exposed to an ambient atmosphere, and …
around the GaAs nanowire (NW) core which is exposed to an ambient atmosphere, and …
High efficient THz emission from unbiased and biased semiconductor nanowires fabricated using electron beam lithography
S Balci, DA Czaplewski, IW Jung… - IEEE Journal of …, 2017 - ieeexplore.ieee.org
Besides having perfect control on structural features, such as vertical alignment and uniform
distribution by fabricating the wires via e-beam lithography and etching process, we also …
distribution by fabricating the wires via e-beam lithography and etching process, we also …