We present a compact model based on the Landauer transmission theory for the silicon
quantum wire and quantum well metal-oxide-semiconductor field effect transistor (MOSFET) …

This article proposes a ultralow-power (ULP) subthreshold model for short-channel
nanowire underlap junctionless transistor (JLT-U) incorporating quantum confinement effect …

A quasi-analytical model bas been developed for predicting the current–voltage
characteristics of a cylindrical surrounding gate metal-oxide-semiconductor field-effect …

In this book, the problem of electron and hole transport is approached from the point of view
that a coherent and consistent physical theory can be constructed for transport phenomena …

In this work, we investigate the electrostatics of fully-depleted cylindrical nanowire (CNW)
MOSFETs accounting for quantum effects and, in doing so, we propose a new approach for …

An approach is developed for the determination of the current flowing through a nanosize
silicon-on-insulator metal-oxide-semiconductor field-effect transistors. The quantum …

The intermediate transport regime in nanoscale transistors between the fully ballistic case
and the quasi-equilibrium case, described by the drift-diffusion (DD) model, is still an open …

One of the most promising new device structures, scalable to dimensions below 10 nm, is
the double-gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) studied …

One of the major difficulties in solving the coupled Schrödinger–Poisson equations for open
quantum systems is providing the wave functions for a large energy set. In this context, the R …

A model is developed for a detailed investigation of the current flowing through a cylindrical
sub-0.1 μm MOSFET with a closed gate electrode. The quantum mechanical features of the …