(57) ABSTRACT A thin-film storage transistor includes (a) first and second polysilicon layers
of a first conductivity serving, respec tively, as a source terminal and a drain terminal of the …

NOR memory strings may be used for implementations of logic functions involving many
Boolean variables, or to generate analog signals whose magnitudes are each …

(57) ABSTRACT A first circuit formed on a first semiconductor substrate is wafer-bonded to a
second circuit formed on a second memory circuit, wherein the first circuit includes …

(57) ABSTRACT A shared memory provides multi-channel access from multiple computing
or host devices. A priority circuit prioritizes the multiple memory requests that are submitted …

A semiconductor memory module for shared memory access implements memory-centric
structures using a quasi-volatile memory. In one embodiment, the memory module for …

A NOR string includes a number of individually addressable thin-film storage transistors
sharing a bit line, with the individually addressable thin-film transistors further grouped into a …

A 3-dimensional array of NOR memory strings being organized by planes of NOR memory
strings, in which (i) the storage transistors in the NOR memory strings situated in a first group …

NOR memory strings may be used for implementations of logic functions involving many
Boolean variables, or to generate analog signals whose magnitudes are each …

G11C16/0466—Erasable programmable read-only memories electrically programmable
using variable threshold transistors, eg FAMOS comprising cells with charge storage in an …

(57) ABSTRACT A process includes (a) providing a semiconductor substrate having a
planar surface;(b) forming a plurality of thin-film layers above the planar surface of the …