III-nitride light-emitting devices

MZ Baten, S Alam, B Sikder, A Aziz - Photonics, 2021 - mdpi.com
III-nitride light-emitting devices have been subjects of intense research for the last several
decades owing to the versatility of their applications for fundamental research, as well as …

Lateral-type spin-photonics devices: development and applications

N Nishizawa, H Munekata - Micromachines, 2021 - mdpi.com
Spin-photonic devices, represented by spin-polarized light emitting diodes and spin-
polarized photodiodes, have great potential for practical use in circularly polarized light …

Topology-induced chiral photon emission from a large-scale meron lattice

X Wu, X Li, W Kang, X Zhang, L Chen, Z Zhong… - Nature …, 2023 - nature.com
Merons are a class of topologically protected particle-like structures created in in-plane
magnetized magnetic films. The structures can act as information carriers and could be used …

Measurement of spin-polarized photoemission from wurtzite and zinc blende gallium nitride photocathodes

SJ Levenson, MB Andorf, BD Dickensheets… - Applied Physics …, 2024 - pubs.aip.org
Spin-polarized photoemission from wurtzite and zinc blende gallium nitride (GaN)
photocathodes has been observed and measured. The p-doped GaN photocathodes were …

Efficient Green Spin Light-Emitting Diodes Enabled by Ultrafast Energy-and Spin-Funneling in Chiral Perovskites

J Yao, Z Wang, Y Huang, J Xue, D Zhang… - Journal of the …, 2024 - ACS Publications
Introducing molecular chirality into perovskite crystal structures has enabled the control of
carrier spin states, giving rise to circularly polarized luminescence (CPL) in thin films and …

Room-temperature spin polariton diode laser

A Bhattacharya, MZ Baten, I Iorsh, T Frost, A Kavokin… - Physical review …, 2017 - APS
A spin-polarized laser offers inherent control of the output circular polarization. We have
investigated the output polarization characteristics of a bulk GaN-based microcavity …

Effects of defect concentration on ferromagnetism in Xe-irradiated GaN films

S Chen, Q Li, Y Qi, P Yan, C Guo, W Cheng… - Chemical Engineering …, 2025 - Elsevier
GaN-based diluted magnetic semiconductors are highly attractive candidates for spintronic
applications. In this study, the effects of defect concentration on defect-induced magnetism in …

Wurtzite spin lasers

PE Faria Junior, G Xu, YF Chen, GM Sipahi, I Žutić - Physical Review B, 2017 - APS
Semiconductor lasers are strongly altered by adding spin-polarized carriers. Such spin
lasers could overcome many limitations of their conventional (spin-unpolarized) …

Spin injection, relaxation, and manipulation in GaN-based semiconductors

Z Sun, N Tang, S Zhang, S Chen, X Liu… - Advances in Physics …, 2023 - Taylor & Francis
GaN-based semiconductors are deemed to be a potential candidate for developing
spintronic devices owing to the artificially controllable spin-orbit coupling and the high Curie …

Room temperature GaN-based edge-emitting spin-polarized light emitting diode

A Bhattacharya, Z Baten, T Frost… - IEEE Photonics …, 2017 - ieeexplore.ieee.org
Room temperature circularly polarized electroluminescence is observed from bulk GaN-
based double-heterostructure edge-emitting light emitting diodes operated with continuous …