Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances
L Zhao, C Liu, K Wang - Small, 2022 - Wiley Online Library
Being direct wide bandgap, III‐nitride (III‐N) semiconductors have many applications in
optoelectronics, including light‐emitting diodes, lasers, detectors, photocatalysis, etc …
optoelectronics, including light‐emitting diodes, lasers, detectors, photocatalysis, etc …
Influence of doping concentration and thickness of regions on the performance of InGaN single junction-based solar cells: A simulation approach
The impact of doping concentration and thickness of n-InGaN and p-InGaN regions on the
power conversion efficiency of single junction-based InGaN solar cells was studied by the …
power conversion efficiency of single junction-based InGaN solar cells was studied by the …
[HTML][HTML] Effect of plasmonic Aluminum nanoparticles shapes on optical absorption enhancement in silicon thin-film solar cells
Scattering from metal nanoparticles near their localized plasmon resonance; especially, the
resonances of noble metals which are mostly in the visible or infrared part of the …
resonances of noble metals which are mostly in the visible or infrared part of the …
Effect of AlN/GaN supercycle ratio on properties of AlxGa1− xN films using super-cycle plasma enhanced atomic layer deposition
ZX Zhang, FB Ren, CH Hsu, XY Zhang, P Gao… - Journal of Alloys and …, 2024 - Elsevier
In this study, aluminum gallium nitride (AlGaN) films are prepared by supercycle plasma
enhanced vapor deposition (PEALD) with trimethylgallium, trimethylaluminum, and NH 3 …
enhanced vapor deposition (PEALD) with trimethylgallium, trimethylaluminum, and NH 3 …
High conversion and quantum efficiency indium-rich p-InGaN/p-InGaN/n-InGaN solar cell
In this paper, an efficient three-layered p-In 0.6 Ga 0.6 N/p-In 0.7 Ga 0.7 N/n-In 0.7 Ga 0.7 N
(PPN) solar cell was designed. The characteristics of the PPN-junction InGaN solar cell were …
(PPN) solar cell was designed. The characteristics of the PPN-junction InGaN solar cell were …
Investigation on indium concentration in two-terminal tandem indium gallium nitride solar cells by SCAPS-1D
Indium gallium nitride (InGaN) thin-film solar cell is a promising photovoltaic (PV) device.
InGaN's bandgap is tunable from 0.7 to 3.4 eV and it exhibits a high absorption coefficient …
InGaN's bandgap is tunable from 0.7 to 3.4 eV and it exhibits a high absorption coefficient …
Near-infrared stimulated emission from indium-rich InGaN layers grown by plasma-assisted MBE
DN Lobanov, KE Kudryavtsev, MI Kalinnikov… - Applied Physics …, 2021 - pubs.aip.org
We report on the stimulated emission (SE) in the near-infrared range from the planar InGaN
epitaxial layers grown on sapphire substrates. By varying the indium content from 100% to …
epitaxial layers grown on sapphire substrates. By varying the indium content from 100% to …
Enhanced SPR-based localized and bulk sensing using a plasmonic nanopillar array with spacer
We report a substantially improved localized and bulk sensing response of a plasmonic
sensor based on a plasmonic nanopillar array spacer-separated from a plasmonic thin film …
sensor based on a plasmonic nanopillar array spacer-separated from a plasmonic thin film …
Polarization-induced hole doping for long-wavelength In-rich InGaN solar cells
The lack of high-quality In-rich p-type InGaN restricts the development of high-efficiency
InGaN solar cells toward the whole solar spectrum. In this work, we report a polarization …
InGaN solar cells toward the whole solar spectrum. In this work, we report a polarization …
Numerical study of a solar cell to achieve the highest InGaN power conversion efficiency for the whole In-content range
R Martínez-Revuelta, HI Solís-Cisneros… - Micromachines, 2022 - mdpi.com
A solar cell structure with a graded bandgap absorber layer based on InGaN has been
proposed to overcome early predicted efficiency. Technological issues such as carrier …
proposed to overcome early predicted efficiency. Technological issues such as carrier …