It has often been suggested that defects can enhance electron tunneling through barriers.
Here, we derive a general expression of the current flowing through semiconductor barriers …

The effect of electron irradiation on the electronic transport through GaAlAs barriers has
been studied. A drastic change in the current voltage characteristics has been observed. At …

InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-
beam epitaxy are reported. The laser emits 1.296 µm light output and demonstrates a very …

We describe the effect of electron irradiation on the current‐voltage characteristics of
nonintentionally doped GaAlAs barriers imbedded in n‐type doped GaAs. It is found that …

The electron transport characteristics of five nin diodes with (Al/sub x/Ga/sub 1-x/)/sub
0.5/In/sub 0.5/P intrinsic barrier regions of various aluminum composition x were determined …

Tunneling through barriers of Al x Ga 1− x As and AlAs was studied using ballistic electron
luminescence spectroscopy. The luminescence provides information on the energy …

A dual-material structure of lattice-matched GaInP on GaAs has a calculated figure of merit
which is approximately 60 times better than Si and 5 times better than GaAs. In this work, the …

Measurements of the dark reverse current in a typical BPW34 silicon photodiode have been
made in the temperature range 100-300 K at various reverse bias voltages ranging from 0 to …

Vertical transport in GaAs/Ga1− yAlyAs barrier structures was investigated using current–
temperature (I–T) measurements in the dark. The samples studied had 500 Å thick Ga1 …

摘要(中) 本研究中, 分析金, 銅/金, 及鎳/金與磷化銦鎵接觸之蕭特基特性. 研究中發現剛蒸鍍好的
金, 銅/金, 及鎳/金與磷化銦鎵接觸之蕭特基位障分別為0.99, 0.99, 以及0.93 eV …