Recent advances and future prospects for memristive materials, devices, and systems
Memristive technology has been rapidly emerging as a potential alternative to traditional
CMOS technology, which is facing fundamental limitations in its development. Since oxide …
CMOS technology, which is facing fundamental limitations in its development. Since oxide …
Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Selective placement of modifiers on hematite thin films for solar water splitting
The design of nanostructured materials for photoelectrochemical water splitting relies on a
detailed understanding of the reactional bottlenecks. For hematite, a model system for …
detailed understanding of the reactional bottlenecks. For hematite, a model system for …
Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide
HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices
owing to its excellent electrical properties and compatibility with complementary metal oxide …
owing to its excellent electrical properties and compatibility with complementary metal oxide …
Crystal and electronic structure of oxygen vacancy stabilized rhombohedral hafnium oxide
Hafnium oxide is an outstanding candidate for next-generation nonvolatile memory solutions
such as OxRAM (oxide-based resistive memory) and FeRAM (ferroelectric random access …
such as OxRAM (oxide-based resistive memory) and FeRAM (ferroelectric random access …
Structural and electrical response of emerging memories exposed to heavy ion radiation
Hafnium oxide-and GeSbTe-based functional layers are promising candidates in material
systems for emerging memory technologies. They are also discussed as contenders for …
systems for emerging memory technologies. They are also discussed as contenders for …
Oxygen-Vacancy-Rich HfO2–x Nanoparticles Supported on Reduced Graphene Oxide for Electrocatalytic Hydrogen Evolution Reactions
AA Jeffery, SS Chougule, I Hasan… - ACS Applied Nano …, 2023 - ACS Publications
Designing nanostructured materials with modified surface structures, which exhibit
interesting properties and applications, is of great importance. The ability to modify the …
interesting properties and applications, is of great importance. The ability to modify the …
An atomistic model of field-induced resistive switching in valence change memory
In valence change memory (VCM) cells, the conductance of an insulating switching layer is
reversibly modulated by creating and redistributing point defects under an external field …
reversibly modulated by creating and redistributing point defects under an external field …
PEALD deposited aluminum hafnium mixed oxide dielectrics for amorphous-IGZO TFTs
HB Chen, WY Wu, YT Wang, JH Yan, MJ Zhao… - Ceramics …, 2024 - Elsevier
Abstract (Al–Hf) mixed oxide thin films (HfAlO) are attracted by many researchers because of
their outstanding optical and electrical properties compared to hafnium oxide (HfO 2). This …
their outstanding optical and electrical properties compared to hafnium oxide (HfO 2). This …
Chemical, Structural, and Electrical Changes in Molecular Layer-Deposited Hafnicone Thin Films after Thermal Processing
Post deposition annealing of molecular layer-deposited (MLD) hafnicone films was
examined and compared to that of hafnium oxide atomic layer-deposited (ALD) films …
examined and compared to that of hafnium oxide atomic layer-deposited (ALD) films …