CVD diamond-SiC composite films: Structure and electrical properties
Thin films of microcrystalline diamond-silicon carbide composite have been deposited by
microwave plasma chemical vapor deposition (CVD) in methane-silane-hydrogen gas …
microwave plasma chemical vapor deposition (CVD) in methane-silane-hydrogen gas …
On the 3C-SiC/SiO2 n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating …
N Lophitis, A Arvanitopoulos… - … IEEE Workshop on …, 2022 - ieeexplore.ieee.org
Cubic (3C-) silicon carbide (SiC) metal oxide semiconductor (MOS) devices have the
potential to achieve superior performance and reliability. The effective channel mobility can …
potential to achieve superior performance and reliability. The effective channel mobility can …
DFT Analysis of the Low Resistive MoSe2-Bi Electrical Contacts
AHM Al-bqerat - 2023 - search.proquest.com
DFT Analysis of the Low Resistive MoSe2-Bi Electrical Contacts by Ashraf Hasan Mohammad
Al-bqerat 7/24/2023 Page 1 DFT Analysis of the Low Resistive MoSe2-Bi Electrical Contacts by …
Al-bqerat 7/24/2023 Page 1 DFT Analysis of the Low Resistive MoSe2-Bi Electrical Contacts by …
Thin SiC and Gan-Based Films and Structures: Production and Properties
AV Sankin, VI Altukhov, ZI Dadasheva - Key Engineering Materials, 2022 - Trans Tech Publ
The article describes the methods for producing thin films and structures based on SiC, GaN
and their SiC–AlN and Al–GaN solid solutions, as well as mathematical models of film …
and their SiC–AlN and Al–GaN solid solutions, as well as mathematical models of film …