A thorough discussion of the various features of the photoluminescence spectra of undoped,
p‐doped and n‐doped Al x Ga1− x As (0≤ x≤ 1) alloys is given. This review covers spectral …

Native point defects control many aspects of semiconductor behavior. Such defects can be
electrically charged, both in the bulk and on the surface. This charging can affect numerous …

A detailed analysis of the role of charged native point defects in controlling the solubility of
electrically active dopants in gallium arsenide is presented. The key roles of (a) positively …

The influences of droplet size on the growth of self-catalyzed ternary nanowires (NWs) were
studied using GaAsP NWs. The size-induced Gibbs–Thomson (GT) effect makes the smaller …

We report on measurements of the frequency-dependent conductivity in lithium-diffused (Li-
diffused) and annealed GaAs in the frequency range 10–10 6Hz and the temperature range …

Positron-lifetime measurements show that acceptors are produced in semi-insulating GaAs
by 1.5-MeV electron irradiation at 20 K. Two types of acceptors can be separated. The first …

The mechanism of silicon diffusion in GaAs, Al0. 3Ga0. 7As, and the silicon diffusion‐
induced layer disordering of multiquantum wells have been studied by photoluminescence …

Si‐doped (211) A and (311) A GaAs samples grown by molecular beam epitaxy (MBE) with
various growth As pressures have been studied. Hall effect measurements have revealed …

The authors report on a photoluminescence investigation of heavily Si-doped (111) A-
oriented GaAs samples. Molecular beam epitaxial growth has been performed with different …

Strong evidence for amphoteric native defect reactions is obtained by photoluminescence
analysis of Si-doped GaAs samples (n≈ 1.5× 10 18 cm− 3) annealed under different …