Atomically 2D layered ferroelectric semiconductors, in which the polarization switching
process occurs within the channel material itself, offer a new material platform that can drive …

Arsenic is an essential dopant in conventional silicon-based semiconductors and emerging
phase-change memory (PCM), yet the detailed functional mechanism is still lacking in the …

Neuromorphic visual systems are promising candidates for emulating vision perception and
recognition tasks, especially for two-dimensional (2D) semiconductor-based imaging …

A design concept of phase-separated amorphous nanocomposite thin films is presented that
realizes interfacial resistive switching (RS) in hafnium-oxide-based devices. The films are …

Abstract Two-dimensional (2D) semiconductor-based vertical-transport field-effect
transistors (VTFETs)–in which the current flows perpendicularly to the substrate surface …

Resistive random access memory (RRAM) devices have been demonstrated to be a
promising solution for the implementation of a neuromorphic system with high-density …

Combining superconducting resonators and quantum dots has triggered tremendous
progress in quantum information, however, attempts at coupling a resonator to even charge …

Crossbar resistive memory architectures enable high-capacity storage and neuromorphic
computing, accurate retrieval of the stored information is a prerequisite during read …

Abstract Ferroelectric HfxZr1–xO2 (HZO) is typically achieved by crystallization of an
amorphous thin film via rapid thermal processing (RTP) at time scales of seconds to minutes …

The incorporation of thermal dynamics alongside conventional optoelectronic principles
holds immense promise for advancing technology. Here, we introduce a GaON/GaN …