[PDF][PDF] High-speed visible light communication based on micro-LED: A technology with wide applications in next generation communication

T Lu, X Lin, W Guo, CC Tu, S Liu, CJ Lin… - Opto-Electronic …, 2022 - researching.cn
The evolution of next-generation cellular networks is aimed at creating faster, more reliable
solutions. Both the next-generation 6G network and the metaverse require high transmission …

Yellow–red emission from (Ga, In) N heterostructures

B Damilano, B Gil - Journal of Physics D: Applied Physics, 2015 - iopscience.iop.org
Abstract (Ga, In) N-based light emitting devices are very efficient in producing blue light and
to a lesser extent green. Extending their spectral range to longer wavelengths while …

Chip-scale GaN integration

KH Li, WY Fu, HW Choi - Progress in quantum electronics, 2020 - Elsevier
Abstract Blue LEDs and HEMTs based on III-Nitride have been flourishing commercially
across the globe, thanks largely to breakthroughs in the material quality of the wide …

Color-tunable, phosphor-free InGaN nanowire light-emitting diode arrays monolithically integrated on silicon

R Wang, HPT Nguyen, AT Connie, J Lee, I Shih… - Optics express, 2014 - opg.optica.org
We demonstrate controllable and tunable full color light generation through the monolithic
integration of blue, green/yellow, and orange/red InGaN nanowire light-emitting diodes …

Multi-colour light emission from InGaN nanowires monolithically grown on Si substrate by MBE

VO Gridchin, KP Kotlyar, RR Reznik… - …, 2021 - iopscience.iop.org
InGaN nanostructures are among the most promising candidates for visible solid-state
lighting and renewable energy sources. To date, there is still a lack of information about the …

Pulse‐Modulation Controllable Monolithic Full‐Color Semipolar GaN‐based Light Emitting Diodes

GW Lee, JH Oh, SN Lee - Advanced Optical Materials, 2023 - Wiley Online Library
Monolithic multi‐color light‐emitting diodes (LEDs) offer numerous advantages as multi‐
functional lighting sources. However, the achievement of full‐color monolithic LEDs …

InGaN monolithic full-color light-emitting diode developed by selective removal of active layers in a single p–n junction

K Goshonoo, K Okuno, M Ohya - Applied Physics Express, 2023 - iopscience.iop.org
We demonstrate a monolithic InGaN light-emitting diode (LED) that emits red, green, and
blue (RGB) light. The proposed LED has a simple structure with stacking RGB light-emitting …

Application of hexagonal boron nitride to a heat-transfer medium of an InGaN/GaN quantum-well green LED

I Choi, K Lee, CR Lee, JS Lee, SM Kim… - … applied materials & …, 2019 - ACS Publications
Group III-nitride light-emitting diodes (LEDs) fabricated on sapphire substrates typically
suffer from insufficient heat dissipation, largely due to the low thermal conductivities (TCs) of …

[HTML][HTML] High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits

D Iida, Z Zhuang, P Kirilenko, M Velazquez-Rizo… - Applied Physics …, 2020 - pubs.aip.org
We herein report the growth of phosphor-free InGaN-based white light-emitting diodes
(LEDs) by metalorganic vapor-phase epitaxy. The active region consists of blue and red …

III-nitride nanowires for emissive display technology

V Vignesh, Y Wu, SU Kim, JK Oh… - Journal of Information …, 2024 - Taylor & Francis
The field of III-nitride (InGaN) nanowire micro light-emitting diode (µ-LED) displays is rapidly
expanding and holds great promise, thanks to their chemical stability and outstanding …