The performance of thin film metal-insulator-metal (MIM) diodes is investigated for a variety
of large and small electron affinity insulators using ultrasmooth amorphous metal as the …

Metal-insulator-insulator-metal tunnel diodes with dissimilar work function electrodes and
nanolaminate Al 2 O 3-Ta 2 O 5 bilayer tunnel barriers deposited by atomic layer deposition …

We report on the observation of electron resonant tunneling phenomenon through multi-
stepped potential barriers of metal-insulator-insulator-insulator-metal (MIIIM) diodes …

High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer
dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past …

Extrinsic impurity defect engineering is demonstrated to increase the maximum asymmetry
of metal/insulator/metal (MIM) tunnel diodes. Using atomic layer deposition, transition metal …

Tunnel junctions are interesting for both studying fundamental physical phenomena and
providing new technological applications. Modeling of the tunneling current is important for …

Resonant tunneling characteristics of triangular double-barrier diodes have been
investigated systematically in this Letter, using Airy function approach to solve time …

We fabricate fully epitaxial Fe/Zn O/Mg O/Fe magnetic tunnel junctions (MTJs) with a bilayer
tunnel barrier in which Zn O has a metastable rock-salt crystal structure. We observe a high …

This article concerns a novel negative‐conductance device consisting of a series of N
laterally indented barriers which exhibits resonant tunneling under one bias polarity and …

A theoretical study of resonant tunneling is carried out for an inverse parabolic double-
barrier structure subjected to an external electric field. Tunneling transmission coefficient …