Comprehensive characterization of efficiency limiting defects in the swirl-shaped region of Czochralski silicon

Z Wang, X Zhu, S Yuan, X Yu, D Yang - Solar Energy Materials and Solar …, 2022 - Elsevier
Abstract For Czochralski silicon (Cz-Si) solar cells, swirl-shaped regions in silicon wafers
could lead to efficiency degradation, usually accompanied by hot spots and thermal …

[HTML][HTML] The effect of oxide precipitates on minority carrier lifetime in n-type silicon

JD Murphy, M Al-Amin, K Bothe, M Olmo… - Journal of applied …, 2015 - pubs.aip.org
Supersaturated levels of interstitial oxygen in Czochralski silicon can lead to the formation of
oxide precipitates. Although beneficial from an internal gettering perspective, oxygen-related …

Dissolution of oxygen precipitate nuclei in n-type CZ-Si Wafers to improve their material quality: experimental results

B Sopori, P Basnyat, S Devayajanam… - IEEE Journal of …, 2016 - ieeexplore.ieee.org
We present experimental results which show that oxygen-related precipitate nuclei (OPN)
present in p-doped, n-type, Czochralski wafers can be dissolved using a flash-annealing …

Study and investigation of oxygen related defects in Czochralski silicon ingots

GK Warden - 2020 - ntnuopen.ntnu.no
Etter hvert som oppmerksomheten mot klimakrisen har økt de siste arene, har også
interessen for bedre ytelse til grønne energikilder økt. Et eksempel på slike energikilder er …

Root-cause analysis and characterization of oxygen-related defects in silicon PV material: an approach from macro to nanoscale

A Youssef - 2018 - dspace.mit.edu
With energy demand forecasted to grow significantly, efforts towards mitigating global
warming effects by reducing greenhouse gas emissions are becoming stricter as more …