The quest for high device density in advanced technology nodes makes strain engineering
increasingly difficult in the last few decades. The mechanical strain and performance gain …

In this paper, In 1–x Ga x As based Dual Metal with Gate Stack Cylindrical/Surrounding Gate
Nanowire MOSFET (DMGS CG/SG NWFET) has been proposed for the first time to achieve …

In this paper, the channel doping engineering is proposed to improve the benchmarking
parameters of the analog/radio frequency and the high frequency noise performance of the …

In this article, sub-10 nm top width nanowire In 0.53 Ga 0.47 As gate-all-around (GAA)
MOSFETs with improved subthreshold characteristics and reliability are demonstrated …

Abstract In 0.53 Ga 0.47 As based gate-all-around (GAA) metal-oxide-semiconductor field-
effect transistors (MOSFETs) are being pursued as a promising solution to high speed ultra …

In this article, we investigate the electrical properties of In 0.53 Ga 0.47 As gate-all-around
(GAA) MOSFETs with different nanowire shapes. InGaAs GAA MOSFETs with trapezoid and …

In 0.53 Ga 0.47 As based gate-all-around (GAA) MOSFETs are very promising for high
frequency applications because they deliver higher current and transconductance compared …

Although ultra-scaled III–V Gate-all-around (GAA) nanowire (NW) MOSFETs have been
studied for their immunity to short channel effects, the degradation mechanisms, such as, hot …

Self-heating in nanoscale gate-all-around (GAA) MOSFETs can be attributed to the low
thermal conductivity of channel material, gate dielectric material, and large thermal …

Reduction of transconductance related to the junctionless silicon (JL-Si) transistor shows
challenges to its performance for analog/radio frequency (RF) applications. An effective way …