Recent advances and challenges in indium gallium nitride (inxga1-xn) materials for solid state lighting
R Kour, S Arya, S Verma, A Singh… - ECS Journal of Solid …, 2019 - iopscience.iop.org
In recent times, the demand for electrical energy is increased to such an extent that the
scientific research has to be focused on the development of materials that fulfil the growing …
scientific research has to be focused on the development of materials that fulfil the growing …
Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy
The effects of NH 3 flow, group III flux, and substrate growth temperature on indium
incorporation and surface morphology have been investigated for bulk InGaN films grown by …
incorporation and surface morphology have been investigated for bulk InGaN films grown by …
Structural, electronic, and optical properties of -plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
In this paper we present a detailed analysis of the structural, electronic, and optical
properties of an m-plane (In, Ga) N/GaN quantum well structure grown by metal organic …
properties of an m-plane (In, Ga) N/GaN quantum well structure grown by metal organic …
The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes
RA Oliver, FCP Massabuau, MJ Kappers… - Applied Physics …, 2013 - pubs.aip.org
Photoluminescence and electroluminescence measurements on InGaN/GaN quantum well
(QW) structures and light emitting diodes suggest that QWs with gross fluctuations in width …
(QW) structures and light emitting diodes suggest that QWs with gross fluctuations in width …
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
YL Hu, RM Farrell, CJ Neufeld, M Iza, SC Cruz… - Applied Physics …, 2012 - pubs.aip.org
A two-step GaN barrier growth methodology was developed for In x Ga 1− x N/GaN multiple
quantum well solar cells in which a lower temperature GaN cap layer was grown on top of …
quantum well solar cells in which a lower temperature GaN cap layer was grown on top of …
Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells
Y Zhu, T Lu, X Zhou, G Zhao, H Dong, Z Jia… - Nanoscale research …, 2017 - Springer
InGaN/GaN multiple quantum wells (MQWs) were grown with hydrogen treatment at
well/barrier upper interface under different temperatures. Hydrogen treatment temperature …
well/barrier upper interface under different temperatures. Hydrogen treatment temperature …
Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness
The optical and structural properties of InGaN/GaN multi-quantum wells (MQWs) with
different thicknesses of low temperature grown GaN cap layers are investigated. It is found …
different thicknesses of low temperature grown GaN cap layers are investigated. It is found …
Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices
In this study, the growth of high quality N-polar InGaN films by metalorganic chemical vapor
deposition is presented with a focus on growth process optimization for high indium …
deposition is presented with a focus on growth process optimization for high indium …
Properties of InGaN/GaN MQW LEDs grown by MOCVD with and without hydrogen carrier gas
H Ekinci, VV Kuryatkov, C Forgey, A Dabiran… - Vacuum, 2018 - Elsevier
Two types of 3-period In 14 Ga 86 N/GaN multiple quantum well light-emitting diodes (LEDs)
were studied, differing only in the conditions under which their p-GaN layers were grown by …
were studied, differing only in the conditions under which their p-GaN layers were grown by …
Effects of GaN cap layer thickness on photoexcited carrier density in green luminescent InGaN multiple quantum wells
H Murotani, K Nakatsuru, S Kurai… - Japanese Journal of …, 2023 - iopscience.iop.org
The effects of GaN cap layers on the optical properties of green luminescent InGaN-based
multiple quantum wells were studied by photoluminescence (PL) spectroscopy. The PL peak …
multiple quantum wells were studied by photoluminescence (PL) spectroscopy. The PL peak …