Hybrid heterostructures and devices based on two-dimensional layers and wide bandgap materials
With the further development of Moore's law, the process nodes of integrated circuit have
reached 7 nm or even smaller size. In addition to the significant increase in cost, when the …
reached 7 nm or even smaller size. In addition to the significant increase in cost, when the …
Ternary full adder using multi-threshold voltage graphene barristors
Ternary logic circuit has been studied for several decades because it can provide simpler
circuits and subsequently lower power consumption via succinct interconnects. We …
circuits and subsequently lower power consumption via succinct interconnects. We …
Designing buried-gate InGaZnO transistors for high-yield and reliable switching characteristics
The indium–gallium–zinc-oxide (IGZO) transistor has consistently encountered reliability
issues and has intrinsic material limitations that limit its electrical performance. In this study …
issues and has intrinsic material limitations that limit its electrical performance. In this study …
Graphene barristors for de novo optoelectronics
Graphene-based vertical Schottky-barrier transistors (SBTs), renowned as graphene
barristors, have emerged as a feasible candidate to fundamentally expand the horizon of …
barristors, have emerged as a feasible candidate to fundamentally expand the horizon of …
Novel Graphene Adjustable-Barrier Transistor with Ultra-High Current Gain
C Strobel, CA Chavarin, K Richter… - … Applied Materials & …, 2022 - ACS Publications
A graphene-based three-terminal barristor device was proposed to overcome the low on/off
ratios and insufficient current saturation of conventional graphene field-effect transistors. In …
ratios and insufficient current saturation of conventional graphene field-effect transistors. In …
Photodetectors Based on SnS2/Graphene Heterostructure on Rigid and Flexible Substrates
X Chen, Z Huang, X Ren, G Xu, J Zhou, Y Tao… - …, 2018 - Wiley Online Library
Tin disulfide (SnS2) nanosheets have attracted tremendous attention owing to their unique
electronic and optoelectronic properties. However, practical photodetector applications …
electronic and optoelectronic properties. However, practical photodetector applications …
Gamma-ray irradiation effects on capacitance and conductance of graphene-based Schottky diode
The purpose of this study is to determine the effects of gamma (γ)-ray irradiation on
capacitance and conductance features of Al/Graphene/Al 2 O 3/p-Si structure. Graphene has …
capacitance and conductance features of Al/Graphene/Al 2 O 3/p-Si structure. Graphene has …
Maximizing Schottky barrier modulation in graphene-WSe2/MoSe2 heterojunction barristor through Dirac-cone induced phenomenon
Graphene barristors, employing monolayer graphene on a dielectric material, stand out for
their ability to modulate the Schottky barrier via gate voltage (V GS). However, most of …
their ability to modulate the Schottky barrier via gate voltage (V GS). However, most of …
Threshold voltage modulation of a graphene–ZnO barristor using a polymer doping process
A method to modulate the threshold voltage of a graphene–ZnO barristor is investigated.
Two types of polymers, polyethyleneimine (as an n‐type dopant) and poly (acrylic acid)(as …
Two types of polymers, polyethyleneimine (as an n‐type dopant) and poly (acrylic acid)(as …
3D-graphene-laser patterned p-type silicon Schottky diode
The influence of the laser patterning (LP) process on the quality of graphene (Gr) film and
Schottky diode characteristics was researched in this study. First of all, p-type silicon (Si) …
Schottky diode characteristics was researched in this study. First of all, p-type silicon (Si) …